90 nm generation, 300 mm wafer low k ILD/Cu interconnect technology

Jan, C.-H.; Bielefeld, J.; Buehler, Markus J.; Chikamane, V.; Fischer, K.; Hepburn, T.; Jain, Amit; Jeong, Jae Woong; Kielty, T.; Kook, S.; Marieb, T.; Miner, B.; Nguyen, P.; Schmitz, A.; Nashner, Michael S.; Scherban, T.; Schroêder, B.; Wang, P.-H.; Wu, Renbiao; Xu, Jianzhong; Zawadzki, K.; Thompson, Scott E.; Bohr, M.

doi:10.1109/iitc.2003.1219699

Cited by 14 publications

(8 citation statements)

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“…The use of Cu has enabled R to be minimized while reductions in C have been achieved by introducing interlayer dielectric (ILD) materials with increasingly lower dielectric constants (i.e. k) [2][3][4][5][6]. A common scheme being pursued in lowering C for next generation integrated circuits (IC) is to introduce methyl groups into the SiO 2 matrix ILD material.…”

Section: Introductionmentioning

confidence: 99%

Mechanical properties of high porosity low-kdielectric nano-films determined by Brillouin light scattering

Bailey¹,

Mays²,

Michalak³

et al. 2012

J. Phys. D: Appl. Phys.

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Integrating nanometre sized pores into hybrid organic-inorganic interconnect layers is one of the key approaches being undertaken by the semiconductor industry to sustain the continued scale down of micro-electronic devices. While increasing porosity of the layers achieves the desirable lowering of the dielectric constant (k), it also has the potential to reduce mechanical and thermal stability and degrade device functionality. We report on Brillouin light scattering to measure the independent elastic constants, and thus the mechanical properties, of ultrathin dielectric films with porosity levels up to 45%, the highest in the industry. Longitudinal and transverse acoustic standing mode type excitations were observed from sub 200 nm thick low-k thin films, and their frequency dispersion and associated light scattering intensities were utilized to determine Poisson's ratio (ν) and Young's modulus (E). In comparison with SiO 2 and non-porous low-k materials, significant modifications were found in ν and E of these highly porous carbon-doped SiO 2 (Si-O-C-H) and amorphous carbon (a-C : H) low-k interlayer dielectrics.

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Section: Introductionmentioning

confidence: 99%

Mechanical properties of high porosity low-kdielectric nano-films determined by Brillouin light scattering

Bailey¹,

Mays²,

Michalak³

et al. 2012

J. Phys. D: Appl. Phys.

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“…The samples studied in the present work are test chips simulating a portion of the interconnect structure of 90 nm microprocessor technology [25]. The test chips consist of three levels of copper metallization embedded in an interlayer dielectric (ILD) with etch stop (ES) dielectric films separating the levels (see Fig.…”

Section: Methodsmentioning

confidence: 99%

Adhesion studies in integrated circuit interconnect structures

Molina-Aldareguia

Ocaña

González

et al. 2007

Engineering Failure Analysis

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“…The addition of free volume / decreased network connectivity, however, results in many of the thermal and mechanical properties of these materials being significantly reduced. [9][10][11][12][13][14][15] The reduction in these properties has created numerous thermal-mechanical reliability risks for products incorporating low-k materials related to cracking and delamination in the low-k/Cu interconnect during interconnect fabrication, packaging, and operation. [15][16][17] However further reduction in dielectric constant below k = 2.5 results in materials with larger free volume and pore sizes approaching 1 nm.…”

Section: Introductionmentioning

confidence: 99%

“…9,10 Beyond SiOF, the next generation of low-k materials adopted were inorganic SiOC:H dielectrics 11 with k values ranging from 3.3-3.0. 12 These materials consist of an SiO 2 network that is disrupted by the insertion of terminal organic groups (typically CH 3 ). 9,12 The addition of the terminal organic groups disrupts the SiO 2 network bonding resulting in a material with lower density / more free volume.…”

Section: Introductionmentioning

confidence: 99%

“…12 These materials consist of an SiO 2 network that is disrupted by the insertion of terminal organic groups (typically CH 3 ). 9,12 The addition of the terminal organic groups disrupts the SiO 2 network bonding resulting in a material with lower density / more free volume. The increase in free volume (with a dielectric constant by definition = 1) results in a material with an effectively lower dielectric constant due to volume averaging of the dielectric constant of the free volume with the dielectric constant of the SiO 2 network (k=4).…”

Section: Introductionmentioning

confidence: 99%

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Advances in metrology for the determination of Young's modulus for low-k dielectric thin films

et al. 2012

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As the semiconductor nano-electronics industry progresses toward incorporating increasingly lower dielectric constant materials as the inter layer dielectric (ILD) in Cu interconnect structures, thermo-mechanical reliability is becoming an increasing concern due to the inherent fragility of these materials. Therefore, the need for metrologies to assess the mechanical properties and elastic constants of low-k dielectric materials is great. Unfortunately, traditional techniques such as nano-indentation are being increasingly challenged as target low-k ILD thicknesses decrease below 100 nm for sub 16 nm technologies. In this light, we demonstrate the applicability of two new techniques, Brillouin Light Scattering and Contact Resonance Atomic Force Microscopy, for the determination of Young's modulus for low-k dielectric thin films. We show that these techniques yield values that are in agreement with standard nano-indentation measurements and are capable at film thickness on the order of 100 nm or less.

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90 nm generation, 300 mm wafer low k ILD/Cu interconnect technology

Cited by 14 publications

References 0 publications

Mechanical properties of high porosity low-kdielectric nano-films determined by Brillouin light scattering

Mechanical properties of high porosity low-kdielectric nano-films determined by Brillouin light scattering

Adhesion studies in integrated circuit interconnect structures

Advances in metrology for the determination of Young's modulus for low-k dielectric thin films

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