9.2 A single-chip HSPA transceiver with fully integrated 3G CMOS power amplifiers

Moreira, Jose; Leuschner, Stephan; Stevanovic, N.; Pretl, Harald; Pfann, Peter; Thuringer, R.; Kastner, Martin; Proll, Christian; Schwarz, A. S.; Mrugalla, Florian; Saporiti, Jimena; Basaran, U.; Langer, Andreas; Werth, Tobias D.; Gossmann, Timo; Kapfelsperger, B.; Pletzer, Johann

doi:10.1109/isscc.2015.7062976

Cited by 13 publications

(2 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The effect is twofold -the gain variation results in a AM/AM hysteresis, and the varying C DS (V drain ) causes a AM/PM hysteresis. Hence, there is essentially an electrical bandpass effect, which also distorts the baseband impedance (Moreira et al, 2015). Figure 5 concludes the electro-thermal effects, and maps them to modelling as well as implementation concepts.…”

Section: Thermo-induced Operating Point Effectsmentioning

confidence: 99%

See 1 more Smart Citation

Advanced design and characterization methodologies for memory-aware CMOS power-amplifier implementation

et al. 2017

View full text Add to dashboard Cite

Abstract. This paper reports on an effective root-cause analysis method of memory effects in power amplifiers, as well as introduces compensation techniques on a circuit design level. Despite conventional memory-effect approaches, the discussed method uses a two-tone scan over a wide operation and modulation range. This enables an in-depth study of physical causes and helps to implement compensation techniques at design stage. On the one hand, this circuit investigation is optimized using an automated SystemC model parametrized with real device and measurement values. Hence, computation time is widely reduced which shortens design cycles. On the other hand, the implementation of the derived circuit compensation means will reduce the complexity of digital pre-distortion due to a reduced memory-effect induced AM/AM and AM/PM hysteresis. The approach is demonstrated on a 65 nm CMOS power amplifier with an OIP1 of 27 dBm and a PAE of over 30 % using WCDMA and LTE signals. In fact, mismatch could be reduced by more than 8 %.

show abstract

Section: Thermo-induced Operating Point Effectsmentioning

confidence: 99%

“…A possible implementation is presented in Fig. 6 ( Moreira et al, 2015). A RF digital-to-analog converter (RF-DAC) is used to generate bias and gain control as well as an AM signal.…”

Section: Connection Of Rfdac and Integrated Pamentioning

confidence: 99%