8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions

Vlaskina, S. I.

doi:10.15407/spqeo16.03.273

Cited by 8 publications

(22 citation statements)

References 27 publications

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“…SF related luminescence dominates in pure SiC crystals [22]. After full extinction of the SF i luminescence described in [23] at the temperature of 35-40 K, a weak (in its intensity) and wide background band of radiation remained.…”

Section: Resultsmentioning

confidence: 96%

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Nanostructures in lightly doped silicon carbide crystals with polytypic defects

Vlaskina¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. In this work, photoluminescence spectra of lightly doped SiC crystals with ingrown original defects are reported. , N D  110 18 cm -3 were investigated. The analysis of absorption, excitation and low temperature photoluminescence spectra suggests formation of a new micro-phase during the growth process and appearance of the deep-level (DL) spectra. The complex spectra of the crystals can be decomposed into the so-called DL i (i = 1, 2, 3, 4) spectra. The appearance of the DL i spectrum is associated with formation of new nano-phases. Data of photoluminescence, excitation and absorption spectra show the uniformity of different DL i spectra. Structurally, the general complexity of the DL i spectra correlated with the degree of disorder of the crystal and was connected with onedimensional disorder, the same as in the case of the stacking fault (SF i ) spectra. The DL i spectra differ from SF i spectra and have other principles of construction and behavior. The DL i spectra are placed on a broad donor-acceptor pairs emission band in crystals with higher concentrations of non-compensated impurities. The excitation spectra for the DL i and SF i spectra coincide and indicate formation of nanostructures 14H 1 4334, 10H 2 55, 14H 2 77, 8H44.

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Section: Resultsmentioning

confidence: 96%

“…Spectroscopy of defects in pure perfect crystal SiC has already been described in the works of Refs. [6,16,[20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Nanostructures in lightly doped silicon carbide crystals with polytypic defects

Vlaskina¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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“…2). These electrical properties of the films obtained within the temperature range 200…600 °C are shown in Table. Formation of nc-SiC at the temperature 200 °C is confirmed by obtained electrophysical and X-ray data [4][5][6].…”

Section: Experiments and Discussionmentioning

confidence: 95%

“…Films deposited using HF-PECVD with CH 3 SiCl 3 gas as silicon and carbon source have better advantages than those deposited using CH 4 and SiH 4. Complex investigations of structural, electro-physical and optical properties allow choosing these technological parameters, which are provided by deposition films on large substrates (100 mm) at low temperatures (room temperature).…”

Section: Resultsmentioning

confidence: 99%

“…Perfect nanocrystal shows a typical spectrum of nitrogen bound exciton complexes (PRS) together with the linear ABC-spectrum related to Ti [(δ-0) -(a)] and emission spectra of the donor-acceptor pairs. Another spectrum with zero-phonon line (2.89…2.94 eV) was found after identifying the SF [4] and DL spectra [5,6]. GB spectra were observed simultaneously with the SF and DL ones (Figs.…”

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Nanocrystalline silicon carbide films for solar cells

Vlaskin¹

2016

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Nanocrystalline silicon carbide (nc-SiC) films as protective coating and as solar cell material for a harsh environment, high temperatures, light intensities and radiation, were investigated. p-and n-types 100-mm silicon wafers with (100) orientation were used as substrates for SiC films deposition. The films were deposited using HighFrequency Plasma Enhanced Chemical Vapor Deposition (HF-PECVD) with CH 3 SiCl 3 gas as a silicon and carbon source. Hydrogen supplied CH 3 SiCl 3 molecules in the field of HF discharge. Deposition was carried out on a cold substrate. The power density was 12.7 W/cm 2 . Deposition conditions were explored to prepare films with a controlled band gap and a low defect density. Formation of nc-3C-SiC films has been confirmed by the high resolution-transmission electron microscopy analysis, optical band gap values E Tauc , conductivity, charge carrier activation energy and Hall measurements. The efficiency of photoconductivity was calculated for evaluating the photoconductivity properties and for the correlations with technology. For p-n junction creation in solar cell fabrication, the ntypes nc-SiC films were doped with Al. Employing Al as a doping material of nc-n-SiC, the open-circuit voltage as high as 1.43 V has been achieved.

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Introducing a new atomic parameter of energy scale for wideband semiconductors and binary materials

2019

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The fundamental concept in the science of dislocations is the study of the optical properties of semiconductors. The purpose of this work is to investigate the dependence of the structural features of the low-temperature photo luminescence (LTPL) spectra with the lattice parameters of wideband semiconductors and binary materials. A decoding method of the LTPL spectra of the binary polytypic structures of SiC was used. As a result, we introduce here for the first time a new i-unit atomic parameter of energy scale for the LTPL spectra of binary polytypic nanostructures. The i-unit parameter equals 4.3 meV, i.e. which equals 1/2 of the distance between adjacent Si-C layers and gives the exact multiples of the basic spectral parameters to tenths of meV. The i-unit of energy scale allows the simplifying method of spectral analysis of fine structures in SiC polytypes. The proposed new atomic i-scale allows us to monitor the processes of phase transformations up to 0.0787 Å. This allows observing the displacement in tetrahedron of silicon and carbon with dimensions 7.56 Å. The introduction of a new energy parameter makes it possible to control the displacement and position of atoms with very high accuracy, which in turn is very important for understanding the nature of defects in semiconductors. It is shown that phase transformations in SiC are related to dislocation in the crystal and implemented by the deformation and diffusion mechanisms. Due to results the diagram of the interlayer scheme radiative recombination with resulting dislocation levels was introduced.

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8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions

Cited by 8 publications

References 27 publications

Nanostructures in lightly doped silicon carbide crystals with polytypic defects

Nanostructures in lightly doped silicon carbide crystals with polytypic defects

Nanocrystalline silicon carbide films for solar cells

Introducing a new atomic parameter of energy scale for wideband semiconductors and binary materials

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