2008
DOI: 10.1002/sia.v40:3/4
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Cited by 7 publications
(7 citation statements)
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“…[20][21][22][23][24] Photoemission in absorption region enables one to extract the partial density of states (PDOS) in the valence band. In the present work, we have performed x-ray photoemission spectroscopy (XPS) and RPES experiments on undoped and Fe doped (2, 6 at %) CeO 2 thin films grown by PLD on Si (100) in order to obtain a fundamental understanding of the electronic structures and modification of valence band, with respect to Fe doping.…”
Section: Introductionmentioning
confidence: 99%
“…[20][21][22][23][24] Photoemission in absorption region enables one to extract the partial density of states (PDOS) in the valence band. In the present work, we have performed x-ray photoemission spectroscopy (XPS) and RPES experiments on undoped and Fe doped (2, 6 at %) CeO 2 thin films grown by PLD on Si (100) in order to obtain a fundamental understanding of the electronic structures and modification of valence band, with respect to Fe doping.…”
Section: Introductionmentioning
confidence: 99%
“…10,11 A shift, in the order of $1 eV, of Cu 2p to higher binding energies has been observed earlier when Cu is dissolved in solid solution with Al. 12,13 We therefore conclude that Cu in Fig. 9a also corresponds to the metallic state.…”
Section: Resultsmentioning
confidence: 57%
“…Cu 2p values higher than that for pure Cu have been observed for Cu in solid solution with Al. 10,11 The XPS data are plotted as quantitative depth profiles in Fig. 11.…”
Section: Resultsmentioning
confidence: 99%