82‐1: Development of Full Roll to Roll Process for Flexible Display Backplane

Kook, Yun Ho; Lee, HwanKeon; Choi, Sung-Woo; Kim, NamKook; Kim, ChulHo; Park, Kwon‐Shik; Yoon, Soo‐Young; Kang, In‐Byeong

doi:10.1002/sdtp.13141

Cited by 3 publications

(2 citation statements)

References 3 publications

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“…Recently, demand for higher field-effect mobility (μ FE ) and smaller pixel size has grown as part of efforts to develop next-generation displays with ultrahigh resolution beyond 8 K, a refresh rate greater than 240 Hz, and a pixel density above 1000 pixels per inch. Organic light-emitting diode (OLED) technology, which is dominating the high-end display market, requires a relatively high current density of several microamperes due to the current-driving method of light-emitting devices, unlike that of voltage-driven liquid crystal displays. − It is therefore important to precisely understand the self-heating effects in TFTs. Amorphous indium-gallium-zinc oxide ( a -IGZO) is a promising channel material that has been implemented in display backplanes since its invention by Hosono and co-workers in 2004 .…”

Section: Introductionmentioning

confidence: 99%

Theoretical Modeling of a Temperature-Dependent Threshold-Voltage Shift in Self-Aligned Coplanar IZTO Thin-Film Transistors

Kim

Lee

Kim

et al. 2023

ACS Appl. Electron. Mater.

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Here, we investigate the effect of increasing temperature on threshold voltage (V TH ) stability in self-aligned coplanar amorphous indium-zinc-tin oxide (a-IZTO) thin-film transistors (TFTs). An analytical model of the temperature dependency of V TH stability reveals the importance of device geometry and subgap density-of-state (DOS) reductions in highly stable a-IZTO TFTs. The validity of the analytical model is confirmed using experiments and technology computer-aided design simulations to predict quantitative relationships under various shifts in temperatures, subgap DOS, and V TH . The role of hydrogen impurity in performance and V TH stability is also examined. The incorporation of hydrogen in a-IZTO channels improves TFT performance and thermal stability (ΔV TH /ΔT = 3.18 mV/K) due to hydrogen's role as a passivation center. However, excessive incorporation of hydrogen increases subgap DOS distribution, causing a slight deterioration in thermal stability (ΔV TH /ΔT = 3.31 mV/K). This suggests that hydrogen can be converted from a shallow donor to an acceptor-like deep trap state. Our findings inform future designs of stable oxide semiconductor TFTs in terms of thermal stability in emerging organic light-emitting diode, augmented and virtual reality, memory, logic, and monolithic three-dimensional applications.

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Section: Introductionmentioning

confidence: 99%

Theoretical Modeling of a Temperature-Dependent Threshold-Voltage Shift in Self-Aligned Coplanar IZTO Thin-Film Transistors

Kim

Lee

Kim

et al. 2023

ACS Appl. Electron. Mater.

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“…Numerous studies demonstrate the application of the R2R technique to fabricate various electronic devices, such as thin-film transistors (TFTs) [1][2][3][4], solar cells [5,6], transparent electrode [7][8][9][10], smart sensors [11], printed circuit boards [12], and batteries [13], indicating a high interest in upscaling for mass production. Kook et al [1] demonstrated the world's first 20 inch flexible oxide TFT backplane made with polyimide (PI) film involving deposition, patterning, etch, and inspection processes. Meanwhile, a R2R gravure-printed TFT was shown by Koo et al [2].…”

Section: Introductionmentioning

confidence: 99%

Registration error analysis and compensation of roll-to-roll screen printing system for flexible electronics

Gafurov¹,

Jeong²,

Park³

et al. 2021

Flex. Print. Electron.

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One of the key challenges for adapting the roll-to-roll (R2R) process to flexible electronics production is to fulfill the tight registration requirements between layers. This study proposed a precise registration control for an R2R screen printing system based on a combination of registration error analysis, passive compensation, and active compensation. The registration error factors, such as film tension error, sintering error, reference alignment mark accuracy, screen printing error, and screen mask error, were evaluated. Meanwhile, with a refined correlation factor through the experiments, evaluation-based passive compensation was applied to the design layout for making a screen mask. Active compensation is based on combined control, which consists of the tension control and stage alignment control, reduces the registration error's varying term. As a result of passive and active compensation for polyethylene terephthalate film, achieving a machine direction registration error of 0 ± 9 µm (σ) and cross direction of 10 ± 4 µm (σ) was possible. The proposed R2R system with registration control was capable of accurate and precise registration over several hundred prints and was suitable for manufacturing flexible electronic devices.

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Effect of Channel Thickness on Performance of Ultra-Thin Body IGZO Field-Effect Transistors

Kim

Park

Yoo

et al. 2022

IEEE Trans. Electron Devices

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82‐1: Development of Full Roll to Roll Process for Flexible Display Backplane

Cited by 3 publications

References 3 publications

Theoretical Modeling of a Temperature-Dependent Threshold-Voltage Shift in Self-Aligned Coplanar IZTO Thin-Film Transistors

Theoretical Modeling of a Temperature-Dependent Threshold-Voltage Shift in Self-Aligned Coplanar IZTO Thin-Film Transistors

Registration error analysis and compensation of roll-to-roll screen printing system for flexible electronics

Effect of Channel Thickness on Performance of Ultra-Thin Body IGZO Field-Effect Transistors

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