800 mW peak power self-sustained pulsation GaAlAs laser diodes

Takayama, Toru; Imafuji, Osamu; Sugiura, Hideyuki; Yuri, Masaaki; Naito, Hiroshi; Kume, M.; Yoshikawa, A.; Itoh, Kunio

doi:10.1109/islc.1994.519356

Cited by 1 publication

(2 citation statements)

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“…The spatial-hole burning is, therefore, the cause of the instability leading to the SP. In order to obtain robust SP in new material systems, the shape and magnitude of this step would have to be carefully chosen to optimize the guiding/antiguiding instability at lasing carrier densities predicted numerically in multiquantum-well lasers [34]. Similar behavior in broad stripe laser diodes have been investigated both experimentally by Paoli [35] and van der Ziel [36], and theoretically by Buus [32].…”

Section: Discussionmentioning

confidence: 99%

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Self-Pulsation Dynamics in Narrow Stripe Semiconductor Lasers

Landais

Lynch

O’Gorman

et al. 2006

IEEE J. Quantum Electron.

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In this paper, we address the physical origin of self-pulsation in narrow stripe edge emitting semiconductor lasers. We present both experimental time-averaged polarization-resolved near-field measurements performed with a charged-coupled device camera and picosecond time resolved near-field measurements performed with a streak camera. These results demonstrate dynamic spatial-hole burning during pulse formation and evolution. We conclude from these experimental results that the dominant process which drives the self-pulsation in this type of laser diode is carrier induced effective refractive index change induced by the spatial-hole burning.

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Section: Discussionmentioning

confidence: 99%

“…This will appear as a modification of the confinement factor as the function of the photon density in order to take into the waveguide fluctuation. Of course, to obtain a complete representation of the SP dynamics it would be necessary to move to a full two-dimensional model such as [34].…”

Section: Discussionmentioning

confidence: 99%