2012
DOI: 10.1049/el.2012.1120
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80 GHz on-chip metamaterial resonator by differential transmission line loaded with split ring resonator

Abstract: An on-chip metamaterial resonator is demonstrated in 65 nm CMOS at 80 GHz for millimetre-wave integrated circuit (MMIC) applications. The resonator is based on a differential metamaterial transmission-line (T-line) loaded with a split ring resonator (SRR), which can enhance the EM energy coupling and further improve the quality factor (Q). Measurement results indicate that the proposed differential SRR (DSRR) Tline shows a sharp stopband with maximum 35 dB rejection. Moreover, the metamaterial property of the … Show more

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Cited by 23 publications
(18 citation statements)
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References 7 publications
(10 reference statements)
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“…The on-chip SRR can be implemented in a stacked configuration with an on-chip multi-layer back end of line (BEOL) [10]. More stacked layers result in a lower resonant frequency, but suffer from lower Q simultaneously.…”
Section: On-chip Srrmentioning
confidence: 99%
See 1 more Smart Citation
“…The on-chip SRR can be implemented in a stacked configuration with an on-chip multi-layer back end of line (BEOL) [10]. More stacked layers result in a lower resonant frequency, but suffer from lower Q simultaneously.…”
Section: On-chip Srrmentioning
confidence: 99%
“…Recently, a metamaterial-based resonator has been explored in [10,11] to improve the Q with compact area at mm-wave frequency region. A split-ring-resonator (SRR) can be designed in CMOS process with top-metal layer.…”
Section: Introductionmentioning
confidence: 99%
“…Assuming the lower bound , one can take the Fourier transform of (2) to obtain the generalized expression of fractional integral in frequency domain for (3) Similarly, the generalized expression of fractional derivative in frequency domain is (4) As shown in (3) and (4), the fractional-operator in frequency domain can be treated as the product of a magnitude scaling factor and a phase rotation factor . Theoretically the physical behavior of any electronic device can be described by these two fractional factors.…”
Section: A Fractional Calculusmentioning
confidence: 99%
“…However, the primary challenge in CMOS based THz design is how to develop accurate device models that can take into account the loss from strong frequency-dependent dispersion and nonquasi-static effects in THz. As the most fundamental passive structure, the modeling of transmission line (T-line) in CMOS is under significant interest in various designs [3]- [12]. Manuscript Traditionally, T-line is characterized by distributed integerorder RLGC model shown in Fig.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, metamaterial-based resonators have been explored in [17]- [19] to improve the with a compact area at the millimeter-wave region. A split-ring resonator (SRR) or a complementary split-ring resonator (CSRR) can be designed in the CMOS process to provide negative permeability or negative permittivity for millimeter-wave wave propagation, respectively.…”
Section: Introductionmentioning
confidence: 99%