1974 IEEE International Solid-State Circuits Conference. Digest of Technical Papers 1974
DOI: 10.1109/isscc.1974.1155291
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80 GHz IMPATT amplifier

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Cited by 11 publications
(1 citation statement)
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“…Another negative-resistance device, anticipated theoretically in 1958, had its ISSCC debut in 1965 in "The Read Diode -An Avalanching Transit-Time, NegativeResistance Oscillator", by C. A. Lee, R. L. Batdorf, W. Wiegmann, and G. Kaminsky [6], with reports of oscillations in the 100-200MHz frequency range using a simple circuit. Avalanche-mode diodes progressed to supplying 10 dB of gain at millimeter wave frequencies by 1974 (H. Hayashi, F. Iwai, T. Fujita, M. Akaike, H. Kato, "80GHz IMPATT Amplifier" [7]). …”
mentioning
confidence: 99%
“…Another negative-resistance device, anticipated theoretically in 1958, had its ISSCC debut in 1965 in "The Read Diode -An Avalanching Transit-Time, NegativeResistance Oscillator", by C. A. Lee, R. L. Batdorf, W. Wiegmann, and G. Kaminsky [6], with reports of oscillations in the 100-200MHz frequency range using a simple circuit. Avalanche-mode diodes progressed to supplying 10 dB of gain at millimeter wave frequencies by 1974 (H. Hayashi, F. Iwai, T. Fujita, M. Akaike, H. Kato, "80GHz IMPATT Amplifier" [7]). …”
mentioning
confidence: 99%