80 Gbit∕s wavelength conversion using MQW electroabsorption modulator in delayed-interferometric configuration

Nishimura, K.; Inohara, Ryo; Tsurusawa, M.; Usami, M.

doi:10.1049/el:20030515

Cited by 16 publications

(5 citation statements)

References 2 publications

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“…Also, the powers required to obtain switching in an SOA seem to be an order lower compared to electroabsorption modulators [2], [66]. Note that Fig.…”

Section: Discussionmentioning

confidence: 93%

All-Optical Logic Based on Ultrafast Gain and Index Dynamics in a Semiconductor Optical Amplifier

Dorren

Yang

Mishra

et al. 2004

IEEE J. Select. Topics Quantum Electron.

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Abstract-We investigate nonlinear carrier dynamics in a multiquantum-well semiconductor optical amplifier (SOA) in the context of ultrafast all-optical logic. A rate-equation model is presented that accounts for two-photon absorption, free-carrier absorption, self-and cross phase modulation, carrier heating, spectral, spatial hole burning, and self-and cross polarization modulation. The nonlinear refractive index dynamics is investigated theoretically and experimentally. We find nonlinear phase changes larger than radians, which recovers on a timescale in the order of 1 ps. We also investigate a nonlinear AND gate that consists of an SOA that is placed in an asymmetric Mach-Zehnder interferometer. We show that the gate can be operated using 800-fJ optical pulses with duration of 200 fs while having a contrast ratio larger than 11 dB.Index Terms-Optical logic, optical signal processing ultrafast carrier dynamics, semiconductor optical amplifier.

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“…Also, the powers required to obtain switching in an SOA seem to be an order lower compared to electroabsorption modulators [2], [66]. Note that Fig.…”

Section: Discussionmentioning

confidence: 93%

All-Optical Logic Based on Ultrafast Gain and Index Dynamics in a Semiconductor Optical Amplifier

Dorren

Yang

Mishra

et al. 2004

IEEE J. Select. Topics Quantum Electron.

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“…66) Also, the powers required to obtain switching in an SOA seem to be an order lower compared to electroabsorption modulators. 2,67) Note that Fig. 7 shows that the largest nonlinear phase shifts in our SOA are obtained at zero injection current.…”

Section: Discussion and Future Challengesmentioning

confidence: 74%

All-Optical Switching and Wavelength Conversion Based on Ultrafast Nonlinearities in Semiconductor Optical Amplifiers

Dorren

Mishra

Yang

et al. 2004

Jpn. J. Appl. Phys.

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We investigate all-optical switching and wavelength conversion based on ultrafast nonlinearities in a multi-quantum-well semiconductor optical amplifier. We present a rate equation model that accounts for two-photon absorption, free-carrier absorption, self-and cross phase modulation, carrier heating, spectral, spatial hole burning and self-and cross polarization modulation. We demonstrate optical AND gate operation using a semiconductor optical amplifier placed in an asymmetric March-Zehnder interferometer and we show that the gate can be operated using 800 fJ optical pulses with duration of 200 fs. We also investigate wavelength conversion based on ultrafast nonlinear polarization rotation. We found a conversion efficiency of 12 dB for control pulse energies of 10 pJ.

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“…Considerable nonlinear phase-shifts in the absorption regime have also been reported by others. In [16,17] wavelength conversion results in InGaAsP/InP MQW electro-absorption modulators have been presented. The authors show that in a 100 mm long device phase-shifts up to 0.25 p rads can be realized using 2 ps pulses with energy of 2.8 pJ.…”

Section: Discussionmentioning

confidence: 99%

Sub-picosecond all-optical switch using a multi-quantum-well semiconductor optical amplifier

YANG

2004

Optics Communications

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We investigate an all-optical switch that is operated by the nonlinear phase-shift introduced by optical pulses with duration of 200 fs in a semiconductor optical amplifier (SOAs). The gate is made out of a commercially available InGaAsP-InGaAs multi-quantum-well (MQW) SOA placed in a Mach-Zehnder interferometer. We have measured the nonlinear phase-shift as a function of the injection current and we show that the largest effect takes place at zero current. We show that the gate has a contrast ratio better than 11 dB and that the switching time is less than 1 ps. The gate is operated with pulse energies of 800 fJ.

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80 Gbit∕s wavelength conversion using MQW electroabsorption modulator in delayed-interferometric configuration

Cited by 16 publications

References 2 publications

All-Optical Logic Based on Ultrafast Gain and Index Dynamics in a Semiconductor Optical Amplifier

All-Optical Logic Based on Ultrafast Gain and Index Dynamics in a Semiconductor Optical Amplifier

All-Optical Switching and Wavelength Conversion Based on Ultrafast Nonlinearities in Semiconductor Optical Amplifiers

Sub-picosecond all-optical switch using a multi-quantum-well semiconductor optical amplifier

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