2016
DOI: 10.1063/1.4959259
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8-band k·p modelling of mid-infrared intersubband absorption in Ge quantum wells

Abstract: The 8-band k·p parameters which include the direct band coupling between the conduction and the valence bands are derived and used to model optical intersubband transitions in Ge quantum well heterostructure material grown on Si substrates. Whilst for Si rich quantum wells the coupling between the conduction bands and valence bands is not important for accurate modelling, the present work demonstrates that the inclusion of such coupling is essential to accurately determine intersubband transitions between hole… Show more

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Cited by 16 publications
(6 citation statements)
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“…Figure 6c shows the band structure of the Ge-Si heterointerface calculated at T = 125 K using the deformation potentials from ref. 47 without any applied electric field for clarity and includes the three main trapped states for dislocations in Ge plotted as dashed lines inside the bandgap 48 . Whilst the 80−90 meV activation energy extracted from Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Figure 6c shows the band structure of the Ge-Si heterointerface calculated at T = 125 K using the deformation potentials from ref. 47 without any applied electric field for clarity and includes the three main trapped states for dislocations in Ge plotted as dashed lines inside the bandgap 48 . Whilst the 80−90 meV activation energy extracted from Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The Ge Luttinger parameters γ 1,2,3 and deformation potentials were taken from Ref. 49 , while the parameter κ was taken from Ref. 50 .…”
Section: Methodsmentioning
confidence: 99%
“…Their values are given in Table III. The six-band Luttinger parameters for SiGe are not described by bowing parameters, 49 so Eq. ( 22) cannot be directly used.…”
Section: Parametersmentioning
confidence: 99%