8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Liu, Jielong; Zhu, Jiejie; Mi, Min-Han; Zhu, Qing; Liu, Siyu; Wang, Pengfei; Zhou, Yuwei; Zhao, Ziyue; Zhou, Jiuding; Zhang, Meng; Wu, Mei; Hou, Bin; Wang, Hong; Yang, Ling; Ma, Xiaohua

doi:10.1063/5.0080120

Cited by 11 publications

(2 citation statements)

References 20 publications

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“…Although similarly comparable values of ITC were observed in BP and WSe 2 based Al 2 O 3 metal–insulator–semiconductor capacitors, further improvements in the 2D‐M synthesis, fabrication, and passivation of the high‐ k /2D interface [ 272–274 ] have shown promise for further minimization of ITC. In this regard, the use of the 2D insulator h ‐BN with its pristine interface and the presence of the vdW gap is expected to further minimize defect formation at the dielectric–TMD channel interface, and therefore, yield low values of ITC, as preliminary results [ 275 ] show, where ITC reduction of close to 1 order of magnitude was observed with h ‐BN/WSe 2 interface with respect to Al 2 O 3 /WSe 2 . Further details regarding the prospects of h ‐BN in designing the next‐generation of computing devices are presented in ref.…”

Section: Quantum Mechanical Tunneling Devices For Logic and Memorymentioning

confidence: 99%

Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage

et al. 2022

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As an approximation to the quantum state of solids, the band theory, developed nearly seven decades ago, fostered the advance of modern integrated solid‐state electronics, one of the most successful technologies in the history of human civilization. Nonetheless, their rapidly growing energy consumption and accompanied environmental issues call for more energy‐efficient electronics and optoelectronics, which necessitate the exploration of more advanced quantum mechanical effects, such as band‐to‐band tunneling, spin–orbit coupling, spin–valley locking, and quantum entanglement. The emerging 2D layered materials, featured by their exotic electrical, magnetic, optical, and structural properties, provide a revolutionary low‐dimensional and manufacture‐friendly platform (and many more opportunities) to implement these quantum‐engineered devices, compared to the traditional electronic materials system. Here, the progress in quantum‐engineered devices is reviewed and the opportunities/challenges of exploiting 2D materials are analyzed to highlight their unique quantum properties that enable novel energy‐efficient devices, and useful insights to quantum device engineers and 2D‐material scientists are provided.

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Section: Quantum Mechanical Tunneling Devices For Logic and Memorymentioning

confidence: 99%

Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage

et al. 2022

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“…The current collapse from sample A to D was approximately 16.6%, 9.1%, 4.6% and 3.2%, respectively. The decreased current collapse value is may be due to the AlN insulating layer reducing the hanging bonds on the AlGaN surface such as Ga-O, repairing the interfacial damage [22]. Figure 7(e) plots the capacitance versus voltage (C-V) characteristics of a Schottky diode and magnetron-sputtered AlN diodes at a frequency of 1 MHz.…”

Section: Introductionmentioning

confidence: 99%

Decreased trap density and lower current collapse in AlGaN/GaN HEMTs by adding a magnetron-sputtered AlN gate

Jia¹,

Zhang²,

Wang³

et al. 2022

J. Phys. D: Appl. Phys.

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In this paper, AlN films grown by magnetron sputtering method have been proposed as the gate insulator layer of AlGaN/GaN high-electron-mobility-transistors (HEMTs) to decrease gate leakage current and suppress the interface trap. The effect of the temperature of substrate on the quality of AlN films have been investigated. By inserting the thin AlN film (35 nm) as a gate insulator layer, the on-state resistance of AlGaN/GaN HEMTs decrease from 11.1 Ω·mm to 10.3 Ω·mm @Vg = 0 V, the current collapse decreases from 16.6% to 3.2%, the gate leakage can be reduced from 1.2×10-1 A/mm to 4.4×10-6 A/mm @Vg = 2 V by five orders of magnitude, and the fast interface states disappear and the normal trap density decreases from 0.96-1.3×1013 cm-2eV-1 to 1.3-3.4×1012 cm-2eV-1, proving that magnetron-sputtered AlN is an effective way to improve the performance of GaN HEMTs.

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Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Chen¹,

Wen²,

Thorsell

et al. 2022

Physica Status Solidi (a)

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The 2D electron gas (2DEG) confinement on high electron mobility transistor (HEMT) heterostructures with a thin undoped GaN channel layer on the top of a grain‐boundary‐free AlN nucleation layer is studied. This is the first time demonstration of a buffer‐free epi‐structure grown with metal–organic chemical vapor deposition with thin GaN channel thicknesses, ranging from 250 to 150 nm, without any degradation of the structural quality and 2DEG properties. The HEMTs with a gate length of 70 nm exhibit good DC characteristics with peak transconductances of 500 mS mm−1 and maximum saturated drain currents above 1 A mm−1. A thinner GaN channel layer improves 2DEG confinement because of the enhanced effectiveness of the AlN nucleation layer acting as a back‐barrier. An excellent drain‐induced barrier lowering of only 20 mV V−1 at a VDS of 25 V and an outstanding critical electric field of 0.95 MV cm−1 are demonstrated. Good large‐signal performance at 28 GHz with output power levels of 2.0 and 3.2 W mm−1 and associated power‐added efficiencies of 56% and 40% are obtained at a VDS of 15 and 25 V, respectively. These results demonstrate the potential of sub‐100 nm gate length HEMTs on a buffer‐free GaN‐on‐SiC heterostructure.

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8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Cited by 11 publications

References 20 publications

Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage

Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage

Decreased trap density and lower current collapse in AlGaN/GaN HEMTs by adding a magnetron-sputtered AlN gate

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

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