8–13 μm InAsSb heterojunction photodiode operating at near room temperature

Kim, J. D.; Kim, S.; Wu, Donghai; Wojkowski, J.; Xu, Jiao; Piotrowski, J.; Bigan, E.; Razeghi, Manijeh

doi:10.1063/1.114323

Cited by 66 publications

(40 citation statements)

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“…The difficulty of this task lies in the dependency of both parameters with the applied voltage in voltage-driven photodetectors. In this respect, good performance results have been obtained in photodiodes working in photovoltaic mode 17 .…”

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confidence: 93%

Optically Triggered Infrared Photodetector

et al. 2014

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We demonstrate a new class of semiconductor device: the Optically Triggered Infrared Photodetector (OTIP). This photodetector is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. Our experimental device, fabricated using InAs/AlGaAs quantum-dot technology, demonstrates normal incidence infrared detection in the 2-6 μm range. The detection is optically triggered by a 590-nm light-emitting diode. Furthermore, the detection gain is achieved in our device without

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confidence: 93%

Optically Triggered Infrared Photodetector

et al. 2014

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“…(4)(5)(6)(7) The IR sensor described in this work is based on several barrier-type photodiode structures connected in series, (8) which allows room-temperature operation with good SNR for human body detection, thermometry, and also NDIR gas sensing.…”

Section: Classification Of Infrared Sensorsmentioning

confidence: 99%

Nondispersive Infrared Gas Sensor Using InSb-Based Photovoltaic-Type Infrared Sensor

2014

Sensors and Materials

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We have developed an uncooled InSb-based infrared sensor with small features, high sensitivity, fast response, and spectral response ranging from 2 to 7 μm. A miniaturized nondispersive infrared (NDIR) gas sensor module was also implemented and tested. Gas concentration measurements were performed, showing that the sensor can detect several gases, such as CO 2 , CO, and NO x , which have absorption peaks at the wavelength response range of the detector. In this work, a fully digital CO 2 meter was implemented, showing that our detector allows fast response measurements implementable in small modules.

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“…At x = 0.35, the band gap of InAs x Sb 1 À x is around 100 meV, corresponding to 12 lm, due to a strong bowing band-gap vs. x relationship [1]. This attracts extensive interests in long-wavelength (8)(9)(10)(11)(12) lm) infrared detector fabrication using InSb-based InAsSb materials [2][3][4]. Furthermore, the better stability, faster response rate and higher room-temperature electron mobility make InAs x Sb 1 À x an alternative material to Hg x Cd 1 À x Te [5][6][7].…”

Section: Introductionmentioning

confidence: 99%