73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters

Synthesis and Atomic and Electronic Structure of New Si−Ge−C Alloys and Compounds

“…The Si  Ge  C System. Alloys of Si 1 - x Ge x have continuously variable lattice parameters and band gap, and they have attracted much attention because of their potential for numerous practical applications . For example, they have been successfully used to create heterojunction bipolar transistors (HBTs) with cutoff frequencies in excess of 100 GHz, which is substantially higher than for the traditional Si counterparts .…”

Properties of gate quality silicon dioxide films deposited on Si–Ge using remote plasma-enhanced chemical vapor deposition with no preoxidation

“…In this context, the enhanced carrier mobilities predicted 1 and experimentally observed 2 in Si/Si-Ge structures have led to a considerable amount of activity in Si-Ge, including a number of potential device applications. [1][2][3][4] Strained Si-Ge layers deposited on relaxed Si exhibit enhanced hole mobilities, while strained Si layers deposited on relaxed Si-Ge exhibit enhanced electron mobilities. In addition, the band gap differences between Si and Si-Ge can be used to design quantum wells which induce carrier confinement.…”

Structure and thermal stability of (Zr0.6Al0.4)O1.8 thin film on strained SiGe layer

“…It is well known that hole mobility is greatly enhanced in compressively strained SiGe layers deposited on Si [1,2]. However, the use of SiGe in mainstream metal-oxide-semiconductor field effect transistor (MOS-FET) structures, has been plagued with problems of poor gate oxides due to the Ge segregation and serious degradation of oxide properties during conventional thermal oxidation of the strained SiGe layers [3].…”