70W GaN-HEMT &lt;italic&gt;Ku&lt;/italic&gt;-Band Power Amplifier in MIC Technology

Maaßen, Daniel; Rautschke, Felix; Ohnimus, Florian; Lothar, Schenk; Dalisda, Uwe; Boeck, Georg

doi:10.1109/tmtt.2016.2636151

Cited by 20 publications

(11 citation statements)

References 17 publications

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“…According to (14), the optimum load resistance for the broadband power amplifier with resistive loading is 73.3% of the optimum load resistance of the class-B power amplifier, given in (4). The efficiency of the broadband amplifier is calculated by the expression given in (15) using (13) for the fundamental component of the drain voltage…”

Section: Broadband Power Amplifier With Resistive Loadingmentioning

confidence: 99%

“…To realise the power amplifier shown in Fig. 3, the load resistance must be transformed to the R opt given in (14) at the current-source plane while taking account the effect of the drainsource capacitance and the drain package inductance. In the VHF and UHF frequencies, a step-down transmission-line transformer transforms the load resistance to R opt .…”

Section: Broadband Power Amplifier With Resistive Loadingmentioning

confidence: 99%

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High‐power multi‐octave laterally diffused metal–oxide–semiconductor power amplifier with resistive harmonic termination

Ahmadi

2019

IET Circuits, Devices & Systems

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In this study, a broadband high-power amplifier with resistive harmonic matching is introduced. The analytical formulations for the drain voltage, output power, optimum load resistance, and efficiency are derived for this type of amplifier under class-B bias conditions. The design is based on a linear model of a laterally diffused metal-oxide-semiconductor transistor. In contrast to the conventional linear method that is based on an equivalent output circuit, the output matching circuit is designed in the presence of the dependent current source and intrinsic elements of the transistor. The design technique permits a broadband amplifier to be realised without load-pull measurement. The broadband power amplifier is intended for operation in the frequency range of 30-1000 MHz and covers the very high-frequency (HF) and ultra-HF bands. The power amplifier delivers 100 W to a 50 Ω load with efficiencies of 38-56%. To validate the design concept, the measured performance of the power amplifier is compared with simulations that incorporate a non-linear model of the transistor. The power amplifier is not driven into saturation and exhibits 2nd and 3rd harmonics of <−20 and <−10 dBc, respectively.

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Section: Broadband Power Amplifier With Resistive Loadingmentioning

confidence: 99%

Section: Broadband Power Amplifier With Resistive Loadingmentioning

confidence: 99%

High‐power multi‐octave laterally diffused metal–oxide–semiconductor power amplifier with resistive harmonic termination

Ahmadi

2019

IET Circuits, Devices & Systems

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“…The GaN HEMT consists of 12 transistor cells and is estimated to have a total gate width of 14.4 mm [8,9]. Because a conventional large-signal model from Wolfspeed has only 4 ports, we cannot control or tune output signals from the transistor cells to achieve the balance of their amplitudes and phases using only the given model.…”

Section: Power Amplifier Designmentioning

confidence: 99%

Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells

et al. 2018

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In this paper, we present a Ku-band 50 W internally-matched power amplifier that asymmetrically combines the power transistor cells of the GaN high electron mobility transistor (HEMT) (CGHV1J070D) from Wolfspeed. The amplifier is designed using a large-signal transistor cell model in the foundry process, and asymmetric power combining, which consists of a slit pattern, oblique wire bonding and an asymmetric T-junction, is applied to obtain the amplitude/phase balance of the combined signals at the transistor cell combining position. Input and output matching circuits are implemented using a thin film process on a titanate substrate and an alumina substrate with the relative dielectric constants of 40 and 9.8, respectively. The pulsed measurement of a 330 μs pulse period and 6% duty cycle shows the maximum saturated output power of 57 to 66 W, drain efficiency of 40.3 to 46.7%, and power gain of 5.3 to 6.0 dB at power saturation from 16.2 to 16.8 GHz.

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“…high electron mobility transistors (HEMTs), have shown premium physical properties, i.e. wide bandgap, high breakdown field and electron saturation velocity, and good thermal conductivity [1][2][3][4]. These preconditions have paved the way for the development of integrated microwave GaN transceivers for high-performance telecommunication systems [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Noise performance of an AlGaN/GaN monolithic microwave integrated circuit (MMIC) low‐noise amplifier under laser exposure

Caddemi¹,

Cardillo²,

Patanè

et al. 2020

IET Microwaves, Antennas & Propagation

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The aim of this study is to disclose how the performance of a gallium nitride (GaN)‐based X‐band low‐noise amplifier is modified by applying a blue‐ray (404 nm) laser beam. The tested amplifier employs an aluminium gallium nitride/GaN (AlGaN/GaN) high electron mobility transistor on silicon carbide whose dc and noise behaviour have been first analysed with and without optical illumination. Mild improvement of the gain together with severe degradation of the noise figure has occurred during light exposure with the amplifier operating according to the recommended bias condition. Conversely, pronounced improvement of the performance has taken place when the amplifier has been biased close to the transistor pinch‐off point. The results presented in this work follow a previous intense activity carried out on devices and amplifiers based on gallium arsenide technology.

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70W GaN-HEMT <italic>Ku</italic>-Band Power Amplifier in MIC Technology

Cited by 20 publications

References 17 publications

High‐power multi‐octave laterally diffused metal–oxide–semiconductor power amplifier with resistive harmonic termination

High‐power multi‐octave laterally diffused metal–oxide–semiconductor power amplifier with resistive harmonic termination

Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells

Noise performance of an AlGaN/GaN monolithic microwave integrated circuit (MMIC) low‐noise amplifier under laser exposure

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