7.4 W continuous-wave output power of master oscillator power amplifier system at 1083 nm

Schwertfeger, S.; Wiedmann, J.; Sumpf, B.; Klehr, A.; Dittmar, F.; Knauer, A.; Erbert, G.; Tränkle, G.

doi:10.1049/el:20060260

Cited by 32 publications

(12 citation statements)

References 3 publications

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“…A device which is capable of maintaining a good beam quality and wavelength stability in the Watt range is the monolithically integrated master-oscillator (MO) power-amplifier (PA), where either a distributed Bragg reflector (DBR) (Wenzel et al 2007) or a distributed feedback (DFB) ) laser and a flared (or tapered) gain-region amplifier are combined on a single chip. Several groups presented such high-power systems (Schwertfeger et al 2006;Chi et al 2005) based on tapered laser devices ) which promise a good beam quality and high output power at the same time. The narrow waveguiding MO part is responsible for the selection of a single lateral lasing mode, which is strongly amplified in the tapered PA part of the device.…”

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confidence: 99%

Improving the stability of distributed-feedback tapered master-oscillator power-amplifiers

et al. 2009

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We report theoretical results on the wavelength stabilization in distributedfeedback master-oscillator power-amplifiers which are compact semiconductor laser devices capable of emitting a high brilliance beam at an optical power of several Watts. Based on a travelling wave equation model, we calculate emitted optical power and spectral maps in dependence on the pump of the power amplifier. We show that a proper choice of the Bragg grating type and coupling coefficient allows optimization of the laser operation, such that the laser emits a high intensity continuous wave beam for a wide range of injection currents.

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confidence: 99%

Improving the stability of distributed-feedback tapered master-oscillator power-amplifiers

et al. 2009

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“…Most commonly, DFB, DBR and external cavity enhanced narrow stripe (e.g. RW) diode lasers are used as seed lasers [104][105][106]. It is crucial, that feedback from the amplifier into the master laser is avoided and optical isolators have to be used.…”

Section: Diode Lasers With Integrated Bragg Reflectorsmentioning

confidence: 99%

Blue‐green light generation using high brilliance edge emitting diode lasers

Jechow¹,

Menzel

Paschke

et al. 2010

Laser & Photonics Reviews

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A review about second harmonic generation using edge emitting diode lasers and nonlinear crystals to obtain laser radiation in the blue-green spectral range is presented. Therefore, pump laser radiation with high brightness and narrow bandwidth is necessary. Thus, this review gives an overview of the advances made with distributed feedback and Bragg reflector lasers, tapered lasers and amplifiers as well as external cavity diode lasers and master oscillator power amplifier schemes to achieve high brilliance emission. Since periodically poled materials have enabled high second harmonic conversion efficiencies with low and moderate pump powers, the review is focused on frequency doubling using those materials. The most commonly used materials, their properties and limitations are discussed briefly. Single pass and resonant SHG setups with waveguide and bulk nonlinear crystals are discussed and an emphasis on building compact and integrated devices is made. PPLN waveguide crystal pumped by a DFB laser (above). Integrated SHG device on a CCP heatsink (below).

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“…For many applications narrow line width operation is required and various techniques have been investigated to achieve this. Different external cavity approaches including the use of diffraction gratings [5] and Bragg gratings [6,7] have been investigated as well as injection seeding using a low power narrow line width seed laser [8].…”

Section: Introductionmentioning

confidence: 99%

“…In the 1000-1100 nm wavelength range, tunable, near diffraction limited external cavity tapered diode lasers have been developed with high output power of 4 W [7] and also large tuning ranges of up to 65 nm have been obtained [11]. An injection seeded tapered diode laser with an output power of up to 7.4 W at 1083 nm has been demonstrated [8].…”

Section: Introductionmentioning

confidence: 99%

Widely Tunable High-Power Tapered Diode Laser at 1060 nm

Jensen

Sumpf

Erbert

et al. 2011

IEEE Photon. Technol. Lett.

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Abstract-We report a large tuning range from 1018 nm to 1093 nm from a InGaAs single quantum well 1060 nm external cavity tapered diode laser. More than 2.5 W output power has been achieved. The tuning range is to our knowledge the widest obtained from a high power InGaAs single quantum well tapered laser operating around 1060 nm. The light emitted by the laser has a nearly diffraction limited beam quality and a narrow line width of less than 6 pm everywhere in the tuning range.

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7.4 W continuous-wave output power of master oscillator power amplifier system at 1083 nm

Cited by 32 publications

References 3 publications

Improving the stability of distributed-feedback tapered master-oscillator power-amplifiers

Improving the stability of distributed-feedback tapered master-oscillator power-amplifiers

Blue‐green light generation using high brilliance edge emitting diode lasers

Widely Tunable High-Power Tapered Diode Laser at 1060 nm

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