6H-SiC pressure sensor operation at 600°C

Ned, A.A.; Okojie, Robert S.; Kurtz, A. D.

doi:10.1109/hitec.1998.676799

Cited by 49 publications

(27 citation statements)

References 2 publications

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“…Micromachined bulk 6H-SiC piezoresistive sensors including accelerometers (Atwell et al 2003;Okojie et al 2002) and pressure sensors (Ned et al 1998) have been developed for applications operating at temperatures up to 600°C. Besides, a recent work shows the fabrication and testing of 4H-SiC piezoresistive pressure sensors (Okojie et al 2010).…”

Section: Silicon Carbide (Sic)mentioning

confidence: 99%

Studies on SiC, DLC and TiO2 thin films as piezoresistive sensor materials for high temperature application

et al. 2012

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The use of thin films as sensing elements for microsensor applications has been shown very attractive due to their low-cost fabrication, potential for integration with standard CMOS technologies and possibility of deposition on different substrate types. In particular, piezoresistive sensors based on thin films have been commonly developed because can be easily implemented using microfabrication processes and present the best relation between sensitivity and system complexity, which showing great advantages in term of device integration. In our previous works (Fraga et al. 2010(Fraga et al. , 2011a, we studied undoped and nitrogen-doped PECVD a-SiC thin films as alternative materials to replace the silicon piezoresistors in strain and pressure sensors for harsh environments. Here, we focused our attention on the piezoresistive properties of sputtered silicon carbide (SiC), diamond-like carbon (DLC) and titanium dioxide (TiO 2 ) thin films. These materials were evaluated in terms of sensitivity or gauge factor and of the influence of the temperature on this sensitivity, allowing a preliminary analysis of the applicability of these thin films in high temperature piezoresistive sensors.

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Section: Silicon Carbide (Sic)mentioning

confidence: 99%

Studies on SiC, DLC and TiO2 thin films as piezoresistive sensor materials for high temperature application

et al. 2012

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“…Compared with Si material, SiC material has more superior piezoresistive effect, higher mechanical strength and higher resistance to thermoplastic deformation ability [5]. He Hongtao has presented a piezoresistive high temperature pressure sensor using the SiC material.…”

Section: Sic Thin-filmmentioning

confidence: 99%

Development and Calibration of High Temperature Pressure Sensor

Tan¹

2017

dtcse

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Abstract. High temperature pressure sensors are widely used in petrochemical, aerospace, metallurgy, gas machine. According to the mechanism, the recent research on high temperature pressure sensors is reviewed. The comparison and analysis about working temperature and sensitivity among different pressure sensors are completed. High temperature pressure calibration system has less research, reasonable system design and calibration method is needed to further studies.

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“…SiC material is attractive for high temperature applications because of its mechanical robustness, chemical inertness, and electrical stability at elevated temperatures and is expected to perform reliably well above 500 • C [81]. Existing high-temperature pressure sensors are implemented using SiC-based piezoresistive devices and have demonstrated sensing capabilities up to 600 • C [82][83][84]. Also SiC based capacitive pressure sensors capable of working at temperatures up to 600 • C have been presented [85].…”

Section: Technologies For Mems Pressure Sensorsmentioning

confidence: 99%