2015
DOI: 10.1007/s10762-014-0140-6
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64 Gbit/s Transmission over 850 m Fixed Wireless Link at 240 GHz Carrier Frequency

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Cited by 159 publications
(59 citation statements)
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“…GaN HEMT technology is promising for broadband wireless communication systems because of its high breakdown electric field and high saturation carrier velocity compared to other competing technologies such as GaAs and InP devices [60]. In fact, by utilizing a MMIC GaAs HEMT front-end, data rates up to 64 Gbps over 850 m [61] and 96 Gbps over 6 m [62] have been attained using a 240 GHz carrier frequency. In terms of InP-HEMT, improvement in electron-beam lithography is witnessing the increase in the speed of such devices as gate length decreases.…”
Section: A Solid-state Electronicsmentioning
confidence: 99%
“…GaN HEMT technology is promising for broadband wireless communication systems because of its high breakdown electric field and high saturation carrier velocity compared to other competing technologies such as GaAs and InP devices [60]. In fact, by utilizing a MMIC GaAs HEMT front-end, data rates up to 64 Gbps over 850 m [61] and 96 Gbps over 6 m [62] have been attained using a 240 GHz carrier frequency. In terms of InP-HEMT, improvement in electron-beam lithography is witnessing the increase in the speed of such devices as gate length decreases.…”
Section: A Solid-state Electronicsmentioning
confidence: 99%
“…120 GHz and 300 GHz and even the entire THz band [1]. With extreme antenna gains, a number of testbeds operating in the lower THz band have already demonstrated data rates on the order of tens of Gbit/s over hundreds of meters as in [2]. In indoor environments with mobility of users, realistically, the THz band is the most suitable for short link distances such as few meters.…”
Section: Introductionmentioning
confidence: 99%
“…In [8], an InP DHBT fully integrated 300 GHz transceiver MMIC is presented. In previous work our group has demonstrated the transmission of 64 Gbit/s over 850 m [9] and 96 Gbit/s over 6 m [10] using a 240 GHz carrier frequency and an MMIC frontend based on GaAs metamorphic high electron mobility transistor (mHEMT) technology. Figure 1 illustrates the state of the art in submillimeter-wave wireless links, operating at or above a carrier frequency of 300 GHz, and employing both optoelectrical and pure electrical signal generation.…”
Section: Introductionmentioning
confidence: 99%