610-nm band AlGaInP single quantum well laser diode

Bour, D. P.; Treat, D.W.; Beernink, K. J.; Krusor, B. S.; Geels, R.S.; Welch, Dave

doi:10.1109/68.275404

Cited by 41 publications

(14 citation statements)

References 10 publications

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“…The material system GaInP/AlGaInP is known to be susceptible to thermally activated non-radiative carrier leakage from the direct G conduction band minimum into the indirect X minima [1,2]. A major factor limiting the high temperature performance is the extreme temperature sensitivity of the threshold current, I th , above room temperature (RT).…”

mentioning

confidence: 99%

Quantifying the Effect of Indirect Carrier Leakage on Visible Al(GaInP) Lasers Using High Pressures and Low Temperatures

Sweeney

Knowles

Sale

et al. 2001

phys. stat. sol. (b)

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The extreme temperature sensitivity of the threshold current, I th , above room temperature in visible edge-emitting lasers (EELs) is investigated. From measurements as a function of temperature we find that I th is dominated by the radiative current, I Rad up to $230 K so I th % I Rad as expected for an ideal device. However, above 230 K, I th increases sharply due to the onset of indirect carrier leakage which we calculate to be $20% of I th at room temperature at an emission wavelength of 672 nm. By 350 K it accounts for >70% of I th . The operating wavelength of the device can be reduced by applying pressure and then we observe that the leakage rapidly increases and at 655 nm it forms $70% of I th at room temperature. This gives rise to a significant deterioration in the light output characteristics and has important implications for producing high power EELs and VCSEL structures based upon Al(GaInP) at these shorter operating wavelengths.Effect of Indirect Carrier Leakage on Visible Al(GaInP) Lasers

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confidence: 99%

Quantifying the Effect of Indirect Carrier Leakage on Visible Al(GaInP) Lasers Using High Pressures and Low Temperatures

Sweeney

Knowles

Sale

et al. 2001

phys. stat. sol. (b)

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“…However, the range of available direct emission wavelengths from semiconductor lasers exhibits a large gap in the visible range from the green to the orange spectral region (see Figure ). Despite various approaches and ongoing research activities in this field, the output power of experimental stage laser diodes in the yellow–orange spectral range is limited to mW power levels, mostly operated in pulsed regime with very low efficiencies. Laser diodes with emission in the green do exist, however, their efficiency and output power drastically decrease for wavelengths beyond 532 nm.…”

Section: Introductionmentioning

confidence: 99%

Diode‐Pumped Laser Operation of Tb³⁺:LiLuF₄ in the Green and Yellow Spectral Range

Castellano‐Hernández

Kalusniak

Metz

et al. 2020

Laser & Photonics Reviews

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Here, a diode‐pumped laser based on trivalent terbium (Tb3+) as the active ion is reported. Optical pumping of a Tb3+‐doped lithium‐lutetium‐fluoride (LiLuF4) crystal with up to 200 mW from a diode laser emitting at a wavelength of 488.2 nm enables continuous‐wave lasing directly in the green and in the yellow. At an emission wavelength of 542 nm, the laser reaches an output power of up to 43.8 mW with a high slope efficiency of 52% with respect to the absorbed pump power. The yellow laser at 587 nm exhibits a slope efficiency of 22% and the output power of 13.8 mW is only limited by the available pump power. Laser thresholds as low as 14 and 27 mW of absorbed pump power are observed for the green and yellow, respectively. The investigations toward further optimization of the laser performance reveal that highly Tb3+‐doped materials are suitable for compact, efficient, and affordable diode‐pumped solid‐state lasers with direct emission in the visible spectral range. These results are of high relevance, as in particular for the yellow spectral range such systems are currently not available.

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“…For short-wavelengths, single quantum well lasers offer good threshold currents down to about 620 nm [14]. The wavelength dependence of the threshold curent density and quantum efficiency are shown in Figure 5, for AIGaInP laser diodes with single quantum well active regions.…”

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confidence: 98%

AlGaInP single quantum well laser diodes

Bour¹,

Treat²,

Beernink³

et al. 1995

UV and Visible Lasers and Laser Crystal Growth

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The properties and low pressure organometallic vapor phase epitaxy of GaIn1..P/(AIGa)o.5Ino.5P quantum well (QW) laser diode heterostructures with Al05ln0.5P cladding layers, and having wavelength 614660 nm), threshold current densities under 200 A/cm2 and efficiencies greater than 75% result from a biaxially-compressed GalnP QW active region. Although short wavelength laser performance is diminished by the poor electron confinement afforded by AlGalnP heterostructures, good 630 nm band performance is achieved with strained, single QW active regions. The wavelength range may also be expanded into the previously difficult 700-nm band, by including lnGaAsP or AIGaAsP QWs. INTRODUCTiON(AlGa)0.5ln0,5P is a high-bandgap Ill-V alloy that is lattice-matched to GaAs substrates, and which is used in 600 nm band laser diodes and LEDs. Continuous-wave (cw), roomtemperature AIGalnP double heterostructure (DH) lasers were first demonstrated in 1 985, at the Japanese Laboratories of NEC, Sony, and Toshiba. More recently, quantum well (QW) heterostructures have led to greatly reduced threshold current densities, especially for strained QWs. Indeed, in many respects the performance of 680 nm AlGalnP lasers now matches that of AIGaAs laser diodes. Extending the operation of AlGalnP lasers to short wavelengths (A<640 nm) is difficult, however, because ofthe relatively weak electron confinement afforded by (AIGa)o.slno.5P heterostructures [1-9]. The beneficial effects of biaxial strain (both compressive and tensile) have led to a sizeable reduction in the threshold current of 600-nm band AIGalnP QW laser diodes [7-9]. Consequently, new applications are being addressed, for example those requiring shorter wavelengths or very high power. PROPERTIES OF (AlGa)o.5lno.5PThe bandgap of (AIXGa1.X)o.51n0.5P is direct for and ranges from 1 .9 eV (for Gao.51n0.5P) to about 2.3 eV (for [Alo.7Gao.3]o.5lno.5P). For x>0.7, the bandgap is indirect and increases very slowly with composition, to about 2.35 eV for Al05ln05P. Compared to AIGaAs, other disting uishing properties of (AIGa)o.5lno.5P heterostructures are difficulties with p-doping, very low hole mobility, and high thermal resistivity. The carrier effective masses are also greater in AlGälnP than in AIGaAs. This translates into a greater density of carrier states, and therefore higher carrier concentrations at threshold.In lattice-matched Gao.5Ino.5P/(AlGal.)o.5lno.5P heterostructures, the direct (1) bandgap energy difference is split between the conduction band offset (E) and the valence band offset (E) in the ratio LiE/1XE=65/35 [101. The conduction band offset increases with the 236 ISPIE Vol. 2380 0-8194-1727-0/95/$6.00 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/23/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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610-nm band AlGaInP single quantum well laser diode

Cited by 41 publications

References 10 publications

Quantifying the Effect of Indirect Carrier Leakage on Visible Al(GaInP) Lasers Using High Pressures and Low Temperatures

Quantifying the Effect of Indirect Carrier Leakage on Visible Al(GaInP) Lasers Using High Pressures and Low Temperatures

Diode‐Pumped Laser Operation of Tb³⁺:LiLuF₄ in the Green and Yellow Spectral Range

AlGaInP single quantum well laser diodes

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610-nm band AlGaInP single quantum well laser diode

Cited by 41 publications

References 10 publications

Quantifying the Effect of Indirect Carrier Leakage on Visible Al(GaInP) Lasers Using High Pressures and Low Temperatures

Quantifying the Effect of Indirect Carrier Leakage on Visible Al(GaInP) Lasers Using High Pressures and Low Temperatures

Diode‐Pumped Laser Operation of Tb3+:LiLuF4 in the Green and Yellow Spectral Range

AlGaInP single quantum well laser diodes

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Diode‐Pumped Laser Operation of Tb³⁺:LiLuF₄ in the Green and Yellow Spectral Range