600 V/ $1.7~\Omega$ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor

Li, Ray; Cao, Yu; Chen, Mary; Chu, Rongming

doi:10.1109/led.2016.2614515

Cited by 114 publications

(55 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The device presented a Vth of 7.9 V (from extrapolation in linear scale) along with a 125%-higher gm, up to 300 S/cm 2 as compared to the quasi-vertical device [23]. The Vth, defined at IDS of 20 A/cm 2 , was 6.4 V. Such a relatively small Vth value is mainly due to donor-type N-vacancies present in the trench sidewall as a result of defects from the dry-etching process [13], [17], [18]. The negative hysteresis of ~ 2 V (at a current density of 0.2 kA/cm 2 ) observed in the IDS-VGS curves is likely due to bulk oxide traps [35], which can be addressed with a better quality gate oxide deposition and post-deposition annealing.…”

Section: Resultsmentioning

confidence: 93%

Fully Vertical GaN-on-Si power MOSFETs

Khadar

Liu

Soleimanzadeh

et al. 2019

IEEE Electron Device Lett.

View full text Add to dashboard Cite

We report the first demonstration of fully-vertical power MOSFETs on 6.6-µm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the Si substrate as well as the resistive GaN buffer layers, followed by a conformal deposition of a 35-µm-thick copper layer on the backside by electroplating, which provides excellent mechanical stability and electrical contact to the drain terminal. The fabrication process of the gate trench was optimized, improving considerably the effective mobility at the p-GaN channel and the output current of the devices. High performance fully-vertical GaN-on-Si MOSFETs are presented, with low specific on-resistance (Ron,sp) of 5 mΩcm 2 and high off-state breakdown voltage (BV) of 520 V. Our results reveal a major step towards the realization of high performance GaN vertical power devices on cost-effective Si substrates.

show abstract

Section: Resultsmentioning

confidence: 93%

Fully Vertical GaN-on-Si power MOSFETs

Khadar

Liu

Soleimanzadeh

et al. 2019

IEEE Electron Device Lett.

View full text Add to dashboard Cite

show abstract

“…While the lateral AlGaN/GaN high electron mobility transistors (HEMTs) continue to penetrate the 600 V -class medium-power electronics market, vertical GaN devices are developed for high-voltage high-current applications. In the past few years, numerous GaN vertical power transistors have been reported on freestanding GaN substrates [1][2][3][4][5][6][7][8][9]. However, the high cost and small available size of bulk GaN substrates could limit the widespread commercial adoption of vertical power devices on bulk GaN.…”

Section: Introductionmentioning

confidence: 99%

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Liu

Khadar

Matioli

2018

IEEE Electron Device Lett.

View full text Add to dashboard Cite

1 Abstract-We demonstrate for the first time the monolithic integration of vertical GaN MOSFETs with freewheeling Schottky barrier diodes (SBD), based on a 6.7-μm-thick n-p-n heterostructure grown on 6-inch silicon substrates by metal organic chemical vapor deposition. The anode of the SBD is integrated in the source pad of the MOSFET and the cathode is directly connected to the MOSFET drain through the bottom n + -GaN layer, eliminating the need of any metal wire interconnection. This monolithic integration scheme offers reduced footprint, minimized parasitic components and simplified packaging. The integrated MOSFET-SBD showed enhancement-mode operation with a threshold voltage of 3.9 V, an on/off ratio of over 10 8 and a dramatic improvement in reverse conduction, without degradation in on-state performance from the integration of the SBD. The integrated GaN-on-Si vertical SBD exhibited excellent performance, with a specific on-resistance of 1.6 mΩ·cm 2 , a turn-on voltage of 0.76 V, an ideality factor of 1.5, along with a breakdown voltage of 254 V. These results reveal the promising potential of emerging GaN vertical devices for future power converters.

show abstract

“…The gate recess utilized a sequential dry and wet etching in order to result in smooth and ≈80° slanted sidewalls and round corners at the bottom of the trench as shown in Figure b. The device transfer curves shown in linear and semi‐log plots are shown in Figure c and exhibit a device threshold voltage of ≈8 V and an I on / I off ratio of 10 7 approaching that of recently developed GaN‐on‐GaN trench‐gate MISFETs . The device output curves are shown in Figure d exhibiting good saturation characteristics and R on value of 31.5 mΩ cm 2 with a gate width of 100 µm (50 µm × 2; see the Supporting Information).…”

mentioning

confidence: 97%

Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si

et al. 2017

View full text Add to dashboard Cite

Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10 cm achieved to date in GaN-on-Si is demonstrated. With these advances, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost-effective high power device paradigm on an Si CMOS platform are demonstrated.

show abstract

600 V/ $1.7~\Omega$ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor

Cited by 114 publications

References 18 publications

Fully Vertical GaN-on-Si power MOSFETs

Fully Vertical GaN-on-Si power MOSFETs

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si

Contact Info

Product

Resources

About