60% PAE, 30W X-band and 33% PAE, 100W Ku-band PAs utilizing 0.15 μm GaN HEMT technology

Torii, Takuma; Imai, Shohei; Maehara, Hiroaki; Miyashita, M.; Kunii, T.; Morimoto, Takahiro; Inoue, Akihisa; Ohta, Akira; Katayama, Hideki; Yunoue, Norihiro; Yamanaka, Koji; Fukumoto, Hisao

doi:10.1109/eumc.2016.7824406

Cited by 7 publications

(2 citation statements)

References 5 publications

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“…Several vendors realize various large gate periphery GaN HEMT transistors with different output power, and research studies on some of these large bare-dies, especially at the X-band are done. [28][29][30][31][32][33][34][35][36][37] To the best of our knowledge, no detailed research is done on the design and fabrication of a power amplifier with Qorvo's TGF2023-2-20 bare-die. This GaN on SiC HEMT transistor has the largest gate periphery on the market.…”

Section: Introductionmentioning

confidence: 99%

A high‐efficiency 50 W X‐band GaN power amplifier in hybrid MIC technology

Ahmadi

Moazzen

Baee

et al. 2020

Int J RF Microw Comput Aided Eng

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In this paper, the design, fabrication, and measurement results of a two‐stage X‐band highly efficient 50 W power amplifier are presented. In the design approach, two 0.25 μm bare‐die GaN on SiC transistors, where one of them has the largest gate periphery on the market, are chosen. A considerably high saturated power gain of more than 20 dB and better than 40% power‐added efficiency (PAE) are achieved over the 10.9 to 11.1 GHz bandwidth. Modulated measurements demonstrate an average output power of 40 W with good linearity specifications. Thermal assessment from measurement results ensures transistors' durability.

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Section: Introductionmentioning

confidence: 99%

A high‐efficiency 50 W X‐band GaN power amplifier in hybrid MIC technology

Ahmadi

Moazzen

Baee

et al. 2020

Int J RF Microw Comput Aided Eng

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“…In 2009, a GaN PA with an output power of over 50 W under continuous wave (CW) conditions was developed [10]. Since 2014, GaN technology has been used to achieve 80-W-class output powers [11], [12]. A 120-W-class SSPA applying this technology could be a replacement for the 120-W-class TWTA in the current broadcasting satellite transponder [13].…”

Section: Introductionmentioning

confidence: 99%

120-W Ku-Band GaN SSPA with Diode Linearizer for Future Broadcasting Satellites

Nagasaka

Kojima

Torii

et al. 2019

IEICE Trans. Electron.

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Satellite broadcasting of 4K/8K ultra-high definition television (UHDTV) was launched in Japan in December 2018. Because this system uses the amplitude and phase shift keying (APSK) modulation scheme, there is a need to improve the non-linear characteristics of the satellite transponders. To meet this requirement, we have been developing a 120-W-class Ku-band solid state power amplifier (SSPA) as a replacement for the currently used traveling wave tube amplifier (TWTA). In this study, we developed a gallium-nitride (GaN) SSPA and linearizer (LNZ). The SSPA achieved an output power of 120 W while maintaining a power added efficiency (PAE) of 31%. We evaluated the transmission performance of 16APSK in this SSPA channel in comparison with that in the TWTA channel.

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