“…4,9,13,22,40 For instance, the results in the present study differ from the previous studies 13,22,36 which were obtained under nearly similar experimental conditions. Likewise, in the present case, we get to see ripple patterns on crystalline Si surface at the fluence 1 Â 10 18 ions cm À2 , 22,36 while there are reports 41 at comparable energies, where ripple patterns are observed at even lower fluences on pre-amorphized Si surfaces. In another work, Chini et al observed that the wavelength and amplitude of Si ripples, evolved under comparable experimental conditions, can vary depending upon the beam scan rate.…”
Section: Methodscontrasting
confidence: 99%
“…Further to this, as discussed earlier, different ion sources are also known to lead to different ripple parameters, which are reported in numerous studies based on low energy Ar-ion induced pattern formation on the Si surface. 13,16,17,22,31,32 In the same note, in the present study, the authors have used a different ion source compared to the one used in Refs. 13 and 37, which may as well lead to the observed difference in the ripple wavelengths evolving at an early stage.…”
Section: Methodsmentioning
confidence: 99%
“…For larger fluences, under our experimental conditions, non-linear effects are expected to occur. 22 Thus, it is important to consider whether the timedependent behavior that we obtain for the ripple wavelength can still be accounted for within the framework of Eq. (1).…”
Section: Methodsmentioning
confidence: 99%
“…However, the behavior of the ripple topography in many experimental observations cannot be explained by BH theory. In particular, both for low 9 and for medium 10,22 ion energy irradiation of silicon, ripple formation only occurs for ion incidence angle, h, above a non-zero threshold value, h c (relatively close to 45 ), while BH theory predicts pattern formation under any off-normal incidence angle. Carter and Vishnyakov 10 (CV) were able to account for a non-zero value of h c by considering momentum transfer from the ions to the target atoms, also within a linear approximation.…”
We have studied the early stage dynamics of ripple patterns on Si surfaces, in the fluence range of 1-3 Â 10 18 ions cm À2 , as induced by medium energy Ar þ -ion irradiation at room temperature. Under our experimental conditions, the ripple evolution is found to be in the linear regime, while a clear decreasing trend in the ripple wavelength is observed up to a certain time (fluence). Numerical simulations of a continuum model of ion-sputtered surfaces suggest that this anomalous behavior is due to the relaxation of the surface features of the experimental pristine surface during the initial stage of pattern formation. The observation of this hitherto unobserved behavior of the ripple wavelength seems to have been enabled by the use of medium energy ions, where the ripple wavelengths are found to be order(s) of magnitude larger than those at lower ion energies.
“…4,9,13,22,40 For instance, the results in the present study differ from the previous studies 13,22,36 which were obtained under nearly similar experimental conditions. Likewise, in the present case, we get to see ripple patterns on crystalline Si surface at the fluence 1 Â 10 18 ions cm À2 , 22,36 while there are reports 41 at comparable energies, where ripple patterns are observed at even lower fluences on pre-amorphized Si surfaces. In another work, Chini et al observed that the wavelength and amplitude of Si ripples, evolved under comparable experimental conditions, can vary depending upon the beam scan rate.…”
Section: Methodscontrasting
confidence: 99%
“…Further to this, as discussed earlier, different ion sources are also known to lead to different ripple parameters, which are reported in numerous studies based on low energy Ar-ion induced pattern formation on the Si surface. 13,16,17,22,31,32 In the same note, in the present study, the authors have used a different ion source compared to the one used in Refs. 13 and 37, which may as well lead to the observed difference in the ripple wavelengths evolving at an early stage.…”
Section: Methodsmentioning
confidence: 99%
“…For larger fluences, under our experimental conditions, non-linear effects are expected to occur. 22 Thus, it is important to consider whether the timedependent behavior that we obtain for the ripple wavelength can still be accounted for within the framework of Eq. (1).…”
Section: Methodsmentioning
confidence: 99%
“…However, the behavior of the ripple topography in many experimental observations cannot be explained by BH theory. In particular, both for low 9 and for medium 10,22 ion energy irradiation of silicon, ripple formation only occurs for ion incidence angle, h, above a non-zero threshold value, h c (relatively close to 45 ), while BH theory predicts pattern formation under any off-normal incidence angle. Carter and Vishnyakov 10 (CV) were able to account for a non-zero value of h c by considering momentum transfer from the ions to the target atoms, also within a linear approximation.…”
We have studied the early stage dynamics of ripple patterns on Si surfaces, in the fluence range of 1-3 Â 10 18 ions cm À2 , as induced by medium energy Ar þ -ion irradiation at room temperature. Under our experimental conditions, the ripple evolution is found to be in the linear regime, while a clear decreasing trend in the ripple wavelength is observed up to a certain time (fluence). Numerical simulations of a continuum model of ion-sputtered surfaces suggest that this anomalous behavior is due to the relaxation of the surface features of the experimental pristine surface during the initial stage of pattern formation. The observation of this hitherto unobserved behavior of the ripple wavelength seems to have been enabled by the use of medium energy ions, where the ripple wavelengths are found to be order(s) of magnitude larger than those at lower ion energies.
“…The dipolar interaction between the magnetic charges acts as a coupling field favoring parallel alignment of magnetization, inducing a surface anisotropy with easy axis along the wrinkles. The strength of surface anisotropy is estimated less than 3 × 10 3 erg/cm 3 , which is by far less than the contribution from the oblique deposition 21, 34, 35 .Figure 2Hysteresis loops with magnetic field applied parallel ( θ = 0°) and perpendicular ( θ = 90°) to wrinkles for FeCoTa films grown ( a ) with different pre-strains of 0%, 5%, 20%, 40% and ( b ) with different deposition angles of 0°, 15°, 30°, 45°.
…”
We investigated the magnetic anisotropy and the high-frequency property of flexible Fe60Co26Ta14 (FeCoTa) thin films obtained by oblique sputtering onto a wrinkled surface. The sinuously wrinkled topography is produced by growing Ta layer on a pre-strained polydimethylsiloxane (PDMS) membrane. Due to the enhanced effect of shadowing, the oblique deposition of FeCoTa layer gives rise to a shift of wrinkle peak towards the incident atomic flux. With increasing the PDMS pre-strain or increasing the oblique sputtering angle, both the uniaxial magnetic anisotropy and the ferromagnetic resonance frequency of FeCoTa films are enhanced, but the initial permeability decreases. The magnetization reversal mechanism of wrinkled FeCoTa films can be interpreted by a two-phase model composed of both coherent rotation and domain wall nucleation. With the enhancement of uniaxial magnetic anisotropy, the domain wall nucleation becomes pronounced in FeCoTa films.
In this paper, topographically asymmetric TiOx/TiSix metastable ultrathin (nano)films on SiO2/Si(100) are produced by controlling interface reactions through ion beam synthesis. The film growth process involves a dual ion beam system, combining Ar+ sputtering a Ti target and in situ postirradiation (Ar+ + H2+ ion etching) at normal incidence to modify the surface morphology. The film's production and characterization are challenging due to the formation of a complex mixed interface+layers (heterophases) containing nanocrystalline and amorphous compounds of Ti and Si. The results for different ion etching times (0–600 s) are systematically presented and analyzed. With the experimental+theoretical information, it is possible to deduce that the heterophase interface is originated by oxide intermixing in combination with the formation of titanium silicides taking place at the early stages of growth. The reactivity of oxygen and hydrogen species is the dominating factor influencing the metastable film growth mediated by solid‐state phase reactions. Given its crucial role at the (Ti/Si):O interface, the chemical route and control of intrinsic defects (non‐stoichiometry) are defined by domain ordering mechanisms followed by surface restructuring. In view of their main characteristics, taken altogether, the current functional metastable films represent a promising alternative for high‐performance photonic and optoelectronic applications.
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