60 GHz power amplifier using PHEMT

Goel, J.; Tan, K. H.; Stones, D.I.; Chan, Roh; Streit, D.C.; Peratoner, S.; Schellenberg, J.M.

doi:10.1109/mwsym.1992.188050

Cited by 12 publications

(1 citation statement)

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“…The GaAs-based pseudomorphic HEMT has stimulated great interest for high-speed and high-frequency, lownoise, and power applications. [4][5][6] There is strong interest in the use of telecommunication systems operating at V-band frequencies for both military and civilian applications. The high atmospheric absorption of microwave signals at 60 GHz is well suited for various applications, such as secure communications and wireless LANs.…”

Section: Introductionmentioning

confidence: 99%

Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process

Lim

Ahn

et al. 2006

jjap

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We report the fabrication and DC and microwave characteristics of 0.12 µm double-recessed T-gate AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistors (PHEMTs) using dielectric-assisted process. Silicon nitride layers 300 and 200 Å thick were deposited by plasma-enhanced chemical vapor deposition (PECVD) at 260 °C to protect the device and to define the gate footprint. The double-recess process was carried out by two different etching techniques to obtain double-recessed T-gates with 0.12 µm gate lengths. Completed double-recessed T-gate AlGaAs/InGaAs/GaAs pHEMT devices fabricated using dry etching exhibited a peak transconductance, gm, of 765 mS/mm, a current-gain cutoff frequency ( fT) as high as 124 GHz, and a maximum oscillation frequency ( fmax) of 247 GHz. The fabricated low-noise amplifier (LNA) has a measured gain of more than 20 dB in the 62.75 to 64.75 GHz frequency range.

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Section: Introductionmentioning

confidence: 99%