60 GHz monolithic LNA utilizing high-speed InAlAs/InGaAs/InP HEMTs and coplanar waveguides

Abstract

A monolithic two-stage low noise amplifier (LNA) on I n P substrate is presented. Coplanar Waveguides and lumped elements are used for t h e matching and biasing networks. The circuit is fully passivated and contains common ports for t h e gate and t h e drain bias. The total chip size is 2 mm x 1 mm. A gain of 15 d B and an input and output matching better than -8 d B were achieved a t 60 GHz.