60 GHz monolithic GaAs front-end circuit for receiver applications

Barker, G.K.; Badawi, M.H.; Mun, J.

doi:10.1049/el:19840226

Cited by 7 publications

(1 citation statement)

References 3 publications

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“…Using 6 MeV S, 1.5 x 10~4/cm 2, the peak carrier concentration of 10Wcm 3, is located 2. and VPE (23). There has been recent interest in an implanted mixer diode (24) for monolithic applications. Up to now conventional implantation energies (several hundred keV) have been used.…”

Section: Resultsmentioning

confidence: 99%

MeV S Implantation into GaAs

Thompson

Dietrich

1988

J. Electrochem. Soc.

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The physical and electrical characteristics of MeV S implants into normalGaAs have been studied. The redistribution of the ion implanted S has been investigated using secondary ion mass spectroscopy and electrochemical capacitance‐voltage profiling. The redistribution of the implanted S has been greatly reduced when rapid thermal anneal, instead of furnace anneal, is employed for activation. The measured diffusion coefficient (using RTA) is 3.7×10−12 cm2/normals , which is comparable to that measured in furnace annealed samples. Hence the reduction in the redistribution is solely from a reduction of the time at temperature. The rapid thermal anneal temperature required for activation is dependent upon implantation dose. 950°C was adequate for activation of implants of 1.15 MeV S with fluences less than or equal to 5×1013/cm2 . In the case of 1.15 MeV S, 5×1014/cm2 , after an 1100°C, 10s anneal, the carrier profile showed incomplete activation and residual defects were observed using cross‐sectional transmission electron microscopy. Device quality buried layer and extended layer profiles have been produced and characterized.

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Section: Resultsmentioning

confidence: 99%