6 kV/3.4 mΩ·cm² Vertical β-Ga₂O₃ Schottky Barrier Diode With BV²/R_on,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC

15 MeV proton damage in NiO/β-Ga2O3vertical rectifiers

“…This has led to recent demonstrations of vertical rectifiers with breakdown voltages more than 8 kV with excellent high temperature operation [9]. While the device performance is promising in terms of dc and switching applications [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26], little is known about the effects of radiation on these heterojunctions. While the Ga 2 O 3 is known to be relatively resistant to total dose damage [27,28], large reversible changes in current-voltage characteristics of the heterojunctions have been observed after Co-60 gamma ray exposure which appears to be due to conductivity changes in the NiO [29].…”

Anisotropic non-plasma HCl gas etching of a (010) β-Ga2O3 substrate

“…This change has been inspired by the demonstration of β-Ga 2 O 3 -based MESFETs and the anticipation of a very high breakdown field of ∼8 MV cm −1 . 2) As a result, many resources have been devoted to studying this n-type unipolar semiconductor to demonstrate high-performance Schottky barrier diodes (SBDs), 3,4) MOSFETs, [5][6][7] and modulationdoped FETs (MODFETs). 8) Along with these unipolar devices, heterojunction bipolar devices such as PN diodes have been achieved by using native p-type oxides such as NiO and Cu 2 O.…”

“…8) Along with these unipolar devices, heterojunction bipolar devices such as PN diodes have been achieved by using native p-type oxides such as NiO and Cu 2 O. 9,10) Recent studies on β-Ga 2 O 3 -based SBDs and heterojunction PN diodes have surpassed the onedimensional unipolar limits of GaN and 4H-SiC diodes, 3,9) consolidating β-Ga 2 O 3 's role as the next-generation power semiconductor.…”

2.1 kV (001)-β-Ga2O3 Vertical Schottky Barrier Diode with High-k Oxide Field Plate

“…We report a vertical β -Ga 2 O 3 Schottky Barrier Diode (SBD) with BaTiO 3 as field plate oxide on low doped thick epitaxial layer exhibiting 2.1 kV breakdown voltage. A thick drift layer of 11 µm with a low effective doping concentration of 8×10 15 cm −3 is used to achieve high breakdown voltage. Using the high-k dielectric with dielectric constant of 248, the breakdown voltage increases from 816V for the non-field-plated SBD to 2152V (>2x improvement) for the field-plated SBD without compromising the on-state performance.…”

“…The availability of highquality melt grown bulk substrates also results in superior epitaxial layer growth 2 and potentially reduced cost. The rapid advances in materials development also enabled many state of the art device realization in both vertical and lateral geometry [3][4][5][6][7][8][9][10][11][12][13][14][15][16] . Vertical devices are of particular interest for high voltage applications due to their superior scalability to high currents compared to lateral devices.…”