6-bit CMOS Digital Attenuators With Low Phase Variations for $X$-Band Phased-Array Systems

Ku, Bon‐Hyun; Hong, Songcheol

doi:10.1109/tmtt.2010.2049691

Cited by 114 publications

(30 citation statements)

References 16 publications

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“…2. Compared with the attenuators presented in [1] and [4], the proposed attenuator is 12% ) including PADs. Besides, the sharing of series resistance makes the insertion loss 20% lower.…”

Section: Design Of Proposed Step Attenuatormentioning

confidence: 96%

“…The phase difference, defined as insertion phase, may cause phase errors for blocks following with the attenuator. By inserting an inductor into the series branches of each attenuation module can compensate the insertion phase of the attenuator [4] and degrade the phase error induced as operating. In addition, the inductance can block part of the signal leakage and improve the operational bandwidth of each attenuation state.…”

Section: Design Of Proposed Step Attenuatormentioning

confidence: 99%

“…Those step attenuators can be switched among different attenuative states with independent attenuation modules [4,5]. While, the long chain of cascaded attenuation modules may cost a large chip area, which can be as large as 0.5 mm 2 [4,6].…”

Section: Introductionmentioning

confidence: 99%

“…While, the long chain of cascaded attenuation modules may cost a large chip area, which can be as large as 0.5 mm 2 [4,6]. Besides, the parasatric resisitance in the long module-chain introduces great insertion loss [1,4]. In order to integrate the digital step attenuators into communication systems in a single chip, the area cost needs decreasing.…”

Section: Introductionmentioning

confidence: 99%

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A broadband 5-bit CMOS step attenuator in small area with low insertion loss

Zhang

et al. 2014

IEICE Electron. Express

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A broadband 5-bit CMOS step attenuator in small area with low insertion loss is presented in this paper, which is implemented with three independent attenuation modules and two compact T-type attenuation networks. Two of the independent modules are switched :-type, and the other is bridged-T type. The compact T-type attenuation networks share the series branches with the adjacent modules to decrease the chip area and insertion loss. The proposed attenuator has a maximum attenuation range of 0-31 dB with 1 dB-increase at the operational frequency range of 5-20 GHz and consumes a layout area cost of 0.44 mm 2 . The insertion loss is less than 8.7 dB. The RMS insertion amplitude and phase error are less than 0.45 dB and 5.7°, respectively.

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“…2. Compared with the attenuators presented in [1] and [4], the proposed attenuator is 12% ) including PADs. Besides, the sharing of series resistance makes the insertion loss 20% lower.…”

Section: Design Of Proposed Step Attenuatormentioning

confidence: 96%

Section: Design Of Proposed Step Attenuatormentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A broadband 5-bit CMOS step attenuator in small area with low insertion loss

Zhang

et al. 2014

IEICE Electron. Express

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“…Attenuators due to their zero DC power consumption and superior linearity are preferable to VGAs particularly in wideband applications [1,2,3,4,5]. Conventional T-/Pi-type, bridge T-/Pi-type and distributed are the basic topologies for most attenuators and can provide step attenuation by digitally controlling the gate voltages [4,5,6,7,8,9,10].…”

Section: Introductionmentioning

confidence: 99%

A CMOS digital step X-type attenuator with low process variations

Wan

Chen

Wang

2017

IEICE Electron. Express

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In this paper, a digital step X-type attenuator with low process variations is demonstrated using 90 nm CMOS technology. The X-type attenuator uses MOSFETs as voltage controlled resistors, which influenced by process parameters. And a compensation circuit associated with the threshold voltage is employed to mitigate the process influence. The attenuator have a maximum attenuation range of 32 dB with 0.5 dB steps. The rms amplitude error and rms phase error are 0.42 dB and 3.1°over 23.5-30 GHz respectively, and the insertion losse is 9.77 dB at 25 GHz. The core chip size is 0.48 mm 2 .

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A large dynamic range voltage controlled attenuator with improved linearity‐in‐dB for ultrasound applications

Fei

et al. 2019

Circuit Theory & Apps

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Summary A large dynamic range (DR) and high linearity‐in‐dB voltage controlled attenuator (VCAT) for ultrasound applications was presented. Continuous tunable VCAT implemented with Metal‐Oxide‐Semiconductor (MOS) transistors used as shunt devices was proposed in this work, and the linearity‐in‐dB performance was analyzed in detail. Nonlinearity of the shunt transistors operated in different regions resulted in poor linearity‐in‐dB attenuation of the VCAT, which was undesirable in an ultrasonic receiver system. An effective linearity‐in‐dB improvement scheme was then proposed. The full scale range of the input control voltage was divided into N intervals with a same equal‐length by uniformly distributed voltage values. At these division voltages, the attenuation gains were corrected to be the ideal ones by the tracing and comparing circuits. In this way, the non‐linearity‐in‐dB was limited to the intervals between the two adjacent corrected attenuation gains, and the overall linearity of the VCAT was improved greatly. Measurement results showed that the dynamic range of the proposed attenuator was 36‐dB, and the gain errors were in a range from −1.22 to −0.55 dB. The noise figures (NF) at the commonly used ultrasonic frequencies was below 6‐dB, and the S11 was better than −10 dB over the input range of the control voltage.

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6-bit CMOS Digital Attenuators With Low Phase Variations for $X$-Band Phased-Array Systems

Cited by 114 publications

References 16 publications

A broadband 5-bit CMOS step attenuator in small area with low insertion loss

A broadband 5-bit CMOS step attenuator in small area with low insertion loss

A CMOS digital step X-type attenuator with low process variations

A large dynamic range voltage controlled attenuator with improved linearity‐in‐dB for ultrasound applications

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