6.5 kV schottky-barrier-diode-embedded SiC-MOSFET for compact full-unipolar module

Kawahara, Koutarou; Hino, Shiro; Sadamatsu, Koji; Nakao, Yukiyasu; Yamashiro, Yusuke; Yamamoto, Yasuji; Iwamatsu, T.; Nakata, Shuhei; Tomohisa, Shingo; Yamakawa, Satoshi

doi:10.23919/ispsd.2017.7988888

Cited by 58 publications

(23 citation statements)

References 5 publications

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Section: Structure and Effects Of Sic Merged Reverse Conductive Devicesmentioning

confidence: 99%

“…By the way, SBD‐embedded type SiC‐MOSFET has been developed recently 9,10 ; specifically, SBD is integrated in each MOSFET cell since SBD is free of on voltage degradation in fly wheeling operation. As compared to conventional MOSFET of 6.5‐kV class, on‐resistance grows about 1.1‐fold, 9 but on the other hand, as compared to non‐embedded type with external SBD or SBD integrated in the outside of MOSFET cell, chip area can be considerably reduced 9 . However, as compared to SiC MRC‐MOSFET considered in this paper, because of SBD embedding, spread resistance Rspread is about two times as high as in conventional SiC‐MOSFET 9 ; that is, same area as in conventional MOSFET is required to embed SBD in a cell.…”

Section: Structure and Effects Of Sic Merged Reverse Conductive Devicesmentioning

confidence: 99%

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Development of SiC merged reverse conductive devices

Sugawara

2021

Electrical Engineering Japan

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SiC merged reverse conductive (MRC) power devices composed of both unipolar devices and bipolar devices have been developed to achieve a smaller chip size, a lower power loss, and a higher reliability. SiC MRC power devices such as SiC MRC‐MOSFET and SiC MRC‐IGBT can achieve this performance, but have the problems of on‐voltage degradation and a large snap‐back voltage. The former has been solved by the newly developed majority carrier heating‐TEDREC (MaCH‐TEDREC) method and the latter has been solved by both the newly developed double buffer device structure and novel standard cells with pilot IGBT.

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Section: Structure and Effects Of Sic Merged Reverse Conductive Devicesmentioning

confidence: 99%

Section: Structure and Effects Of Sic Merged Reverse Conductive Devicesmentioning

confidence: 99%

Development of SiC merged reverse conductive devices

Sugawara

2021

Electrical Engineering Japan

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“…Therefore, integration of a JBS diode in the SiC MOSFET is a promising solution. Using a separate active region to integrate the JBS diode in the SiC MOSFET is a relatively easy way [26], [27]. However, it adds a relatively large chip area.…”

Section: Introductionmentioning

confidence: 99%

A Novel SiC Asymmetric Cell Trench MOSFET With Split Gate and Integrated JBS Diode

Zhang

Chen

et al. 2021

IEEE J. Electron Devices Soc.

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A novel high performance SiC asymmetric cell trench MOSFET with split gate (SG) and integrated junction barrier schottky (JBS) diode (SGS-ATMOS) is proposed for the first time. The shielding effect provided by the SG structure not only reduces the gate-drain capacitance (C gd ) but also alleviates the electric field crowding in the dielectric layer at trench corner. The integrated trench JBS diode bypasses the PiN body diode while obtaining good double protection from the SG and p-type shielding region. Therefore, not only the MOSFET but also diode performance is significantly improved for the proposed structure. Numerical analysis results show that compared with the conventional asymmetric cell trench MOSFET (Con-ATMOS), the high frequency figure of merit (HFFOM 1 , R on • C gd ) is reduced by 92.5% and the Baliga figure of merit (BFOM, BV 2 /R on,sp ) is increased by 57.2%, respectively. In addition, the forward conduction voltage drop (V F ), reverse recovery charge (Q rr ) and peak reverse recovery current (I rrm ) of the diode are reduced from 3.10V, 1.95µC/cm 2 and 68.0A for the Con-ATMOS to 1.56V, 0.97µC/cm 2 and 35.9A for the proposed SGS-ATMOS, respectively. Compared with the Con-ATMOS, the turn-on loss (E on ) and turn-off loss (E off ) of the proposed device are reduced by 33.3% and 33.0%, respectively. The E on and E off of the proposed device are also 33.6% and 30.0% off compared with the Con-ATMOS with external JBS diode, respectively. The temperature characteristics of the SGS-ATMOS are also discussed and it is found that the proposed device exhibits good performance at high temperature.INDEX TERMS 4H-SiC, trench MOSFET, asymmetric cell, split gate, junction barrier Schottky (JBS), figure of merit (FOM), turn-on loss, turn-off loss.

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“…SiC MOSFETs are generally used in conjunction with an external freewheel diode in order to suppress the reverse recovery charge due to body diode in switching applications. Embedding the Schottky diode at the source side has been reported in SiC MOSFET to reduce the reverse recovery charge and the size of the power module [9][10][11]. However, there is at least 15% increment in R on × A due to the inclusion of Schottky contact.…”

Section: Introductionmentioning

confidence: 99%