6–12 GHz double-balanced image-reject mixer MMIC in 0.25 µm AlGaN/GaN technology

Abstract

The front-end circuitry of transceiver modules is slowly being updated from GaAs-based monolithic microwave integrated circuits (MMICs) to Gallium-Nitride (GaN). Especially GaN power amplifiers and T/R switches, but also low-noise amplifiers (LNAs), offer significant performance improvement over GaAs components. Therefore it is interesting to also explore the possible advantages of a GaN mixer to enable a fully GaN-based front-end. In this paper, the design-experiment and measurement results of a double-balanced image-reject mixer MMIC in 0.25 μm AlGaN/GaN technology are presented. First an introduction is given on the selection and dimensioning of the mixer core, in relation to the linearity and conversion loss. At the intermediate frequency (IF)-side of the mixer, an active balun has been used to compensate partly for the loss of the mixer. An on-chip local-oscillator (LO) signal amplifier has been incorporated so that the mixer can function with 0 dBm LO input power. After the discussion of the circuit design the measurement results are presented. The performance of the mixer core and passive elements has been demonstrated by measurements on a test-structure. The mixer MMIC measured conversion loss is <8 dB from 6 to 12 GHz, at 1 GHz IF and 0 dBm LO power. The measured image rejection is better than 30 dB.

Design and Analysis of a Reconfigurable Gilbert Mixer for Software-Defined Radios

“…However, the ones near the core stage prevents signal leakage from the power supply. Various filters have been proposed and the most common techniques are transmission lines, transformer dependent programmable or spiral inductors, and dual-behavior resonator topology [ 42 , 43 , 44 , 45 ]. However, these filters are limited to some extent and may cover a large area.…”

European Frontiers in RF GaN

“…Space heritage is being built and defence systems increasingly rely on GaN for their solid-state power generation, enabling new sensor concepts. Integration levels are increasing (although still not competing with GaAs (let alone Silicon) [17]. Robustness has been a topic since the times of KorriGaN, and remains important [18,19].…”

European gallium nitride capability

“…For example, MAGNUS is an EDA funded project with the aim of producing GaN components using the GH25_10 process available from UMS [23]. The project has produced amplifiers, switches, integrated Rx MMICs and a mixer [2]. A P-Band solid state power amplifier (SSPA), providing a peak output above 150 W with 65 % power added efficiency has been developed with ESA funding [24].…”

“…There are potential benefits to implementing RF switches [1], mixers [2], high power amplifiers (HPAs) [3] and low noise amplifiers (LNAs) [4] in GaN. This is due to the superior material properties of GaN when compared with other semiconductor technologies such as gallium arsenide (GaAs).…”