5G mm-wave Band pHEMT VCO with Ultralow PN

Es-Saqy, Abdelhafid; Abata, Maryam; Fattah, Mohammed; Mazer, Saïd; Mehdi, Mahmoud; Bekkali, Moulhime El; Algani, Catherine

doi:10.25046/aj050360

Cited by 3 publications

(1 citation statement)

References 14 publications

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“…GaAs pHEMTs are nowadays the basis for monolithic microwave integrated circuits (MMIC) circuits [16]. Thanks to the development of these SC devices, researchers have succeeded in designing very efficient communication systems for the next generation 5G [17]- [24].…”

Section: Phemt Technologymentioning

confidence: 99%

High rejection self-oscillating up-conversion mixer for fifth-generation communications

Es-Saqy

Abata

Fattah

et al. 2023

IJECE

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<span lang="EN-US">This paper presents the design of a pseudomorphic high electron mobility transistor (pHEMT) self-oscillating mixer (SOM) for millimeter wave wireless communication systems. The 180° out-of-phase technique is chosen to both improve the desired lower sideband (LSB) signal and to achieve a satisfactory rejection of the unwanted signals (LO, USB and IF). This SOM is designed on the PH15 process of UMS foundry which is based on 0.15 µm GaAs pHEMT. The signal is up-converted from 2 GHz-IF frequency to 26 GHz-LSB frequency, using an autogenerated 28 GHz-LO signal. Simulations were performed using the advanced design system (ADS) workflow. They show 6.4 dB conversion gain and a signal rejection rate of 29.7 dB for the unwanted USB signal. the chip size is 3.6 mm<sup>2</sup>.</span>

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Section: Phemt Technologymentioning

confidence: 99%