56‐5: Image Sensor Using IGZO‐TFT Backplane with Sacrificial Barrier Layer for X‐Ray Detector

Section: Introductionmentioning

confidence: 99%

42‐4: Late‐News Paper: A Radiation‐Hardened Oxide TFT with a Multi‐Layered Gate Dielectric

Ishino,

Sekine,

Tanaka

et al. 2024

“…However, most researches about FPXD were focused on better performance scintillator, such as perovskite scintillators, or oxide TFT [3], which replace a-Si TFT. There are little studies on a-Si PIN photodiode except deposition and etching processes.…”

Section: Introductionmentioning

confidence: 99%

73‐2: Ultrasensitive Image Sensor Based on Amorphous Silicon Avalanche Photodiodes (a‐Si APD) Used for Optical Fingerprint Identification and Flat‐panel X‐ray Detector

Zhou,

Cui,

Kong

et al. 2024

The amorphous avalanche photodiodes (a‐Si APD) have been first introduced into flat‐panel detector. The sensor with a‐Si APD indicate much higher sensitivity than normal PIN PD devices. The ultrasensitive image sensor with a‐Si APD can realize optical fingerprint identification under COE OLED screen with very low transmittance. And the flat‐panel X‐ray detector (FPXD) with a‐Si APD can reduce radiation dose significantly because of its much higher sensitivity compared to traditional FPXD products.

“…This feature lets the OS used in displays on the market [2], and integrated circuits utilizing OS such as a low power-consumption memory [3] and a central processing unit (CPU) [4] are proposed. An analog input and output (I/O) in sensors also requires a low off-state current, and in some application examples utilizing the extremely low leakage current of the OS field-effect transistor (OSFET), an image of an object moving at a high speed is captured by a global shutter method without image distortion [5], and the OSFET is used in an X-ray sensing panel in radiology [6]. A schematic diagram of the X-ray image sensor and a circuit diagram of a pixel in the sensor are shown in Figure 1 and 2, respectively.…”

Section: Introductionmentioning

confidence: 99%

9‐1: Evaluation of X‐ray Resistance of Submicron‐Size c‐Axis Aligned Crystalline‐Oxide Semiconductor

Tsuda

Takahashi

Hamada

et al. 2022

We have investigated the total ionizing dose effect by X‐rays, which is a degradation mode of a single transistor, to find the radiation resistance of oxide semiconductor large scale integrated circuit. At 3000 Gy corresponding to the absorbed dose for 30 years in a space environment, or more specifically, on a geostationary orbit, an oxide semiconductor field‐effect transistor showed a negative drift in threshold voltage of less than 300m V and substantially no degradation in subthreshold slope and mobility. After 60 hours from the irradiation, approximately 40% of the threshold voltage variation was recovered.