512x512 array of dual-color InAs/GaSb superlattice light-emitting diodes

Ricker, Russell J.; Provence, Sydney; Murray, L. M.; Norton, Dennis; Olesberg, J. T.; Prineas, J. P.; Boggess, Thomas F.

doi:10.1117/12.2258468

Cited by 9 publications

(1 citation statement)

References 5 publications

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“…The type-II superlattice (T2SL), a periodic stack of two or more semiconducting layers theorized by Esaki et al 27 , is considered one of the most promising III-V based alternatives to MCT due to suppressed Auger recombination, reduced tunneling currents, and impressive advances in bandgap engineering 2 , 12 . Furthermore, the bandgap tuneability of the T2SL from around 3.5–30 μm, achieved by tuning the thicknesses of the constituent layers, has enabled the development of a variety of devices including photodetectors 28 – 30 , LEDs 31 , 32 , lasers 33 , 34 , and phototransistors 35 , 36 . The IMF array has already proven to be a beneficial innovation for T2SL IR devices, bringing notable advantages such as larger wafers, semi-insulating properties 15 , increased quantum efficiency 13 , 14 , and the opportunity for obtaining optically immersed detectors 37 – 41 , in addition to reduced costs.…”

Section: Introductionmentioning

confidence: 99%

Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform

Kwan

Kesaria

Jiménez

et al. 2022

Sci Rep

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At room temperature, a 10 µm cut-off wavelength coincides with an infrared spectral window and the peak emission of blackbody objects. We report a 10 µm cut-off wavelength InAs/GaSb T2SL p-i-n diode on a GaAs substrate with an intentional interfacial misfit (IMF) array between the GaSb buffer layer and GaAs substrate. Transmission electron microscopy and energy-dispersive X-ray spectroscopy revealed that the heterostructure on GaSb-on-GaAs is epitaxial, single-crystalline but with a reduced material homogeneity, extended lattice defects and atomic segregation/intermixing in comparison to that on the GaSb substrate. Strain-induced degradation of the material quality is observed by temperature-dependent current–voltage measurements. The T2SL with the IMF array appears as a potentially effective route to mitigate the impact of the lattice mismatch once its fabrication is fully optimized for these systems, but additional strain compensating measures can enable a low cost, scalable manufacturing of focal plane arrays (FPA) for thermal imaging cameras for spectroscopy, dynamic scene projection, thermometry, and remote gas sensing.

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Section: Introductionmentioning

confidence: 99%

Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform

Kwan

Kesaria

Jiménez

et al. 2022

Sci Rep

View full text Add to dashboard Cite

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A self-suspended MEMS film convertor for dual-band infrared scene projection

Zhou

Wang

Yang

et al. 2020

Infrared Physics & Technology

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Demonstration of thermal modulation using nanoscale and microscale structures for ultralarge pixel array photothermal transducers

Zhang

et al. 2021

Microsyst Nanoeng

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Large-pixel-array infrared emitters are attractive in the applications of infrared imaging and detection. However, the array scale has been restricted in traditional technologies. Here, we demonstrated a light-driven photothermal transduction approach for an ultralarge pixel array infrared emitter. A metal-black coating with nanoporous structures and a silicon (Si) layer with microgap structures were proposed to manage the thermal input and output issues. The effects of the nanoscale structures in the black coating and microscale structures in the Si layer were investigated. Remarkable thermal modulation could be obtained by adjusting the nanoscale and microscale structures. The measured stationary and transient results of the fabricated photothermal transducers agreed well with the simulated results. From the input view, due to its wide spectrum and high absorption, the black coating with nanoscale structures contributed to a 5.6-fold increase in the temperature difference compared to that without the black coating. From the output view, the microgap structures in the Si layer eliminated the in-plane thermal crosstalk. The temperature difference was increased by 340% by modulating the out-of-plane microstructures. The proposed photothermal transducer had a rising time of 0.95 ms and a falling time of 0.53 ms, ensuring a fast time response. This method is compatible with low-cost and mass manufacturing and has promising potential to achieve ultralarge-array pixels beyond ten million.

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512x512 array of dual-color InAs/GaSb superlattice light-emitting diodes

Cited by 9 publications

References 5 publications

Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform

Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform

A self-suspended MEMS film convertor for dual-band infrared scene projection

Demonstration of thermal modulation using nanoscale and microscale structures for ultralarge pixel array photothermal transducers

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