51‐2: High Efficiency and Long Lifetime InP‐based Red Quantum Dot Light‐Emitting Diodes

Abstract

We report high efficiency and long lifetime indium phosphidebased inverted red quantum dot light-emitting diode (QLED). Our optimized QLED with sol-gel processed electron transport layer (ZnMgO) and new organic hole transport layers with deep HOMO and high mobility exhibited a maximum external quantum efficiency of ~18% and operational lifetime (T50) of 650 hours at the initial brightness of 1000 cd/m 2 .