50-nm gate Schottky source/drain p-MOSFETs with a SiGe channel

Advanced technologies for enhancing drive current of high-density transistors

“…Since the combination between co-implantation and advanced MSA process enables to control the pocket profile [35,52], we could obtain not only the higher drive current but also the characteristic current, which predominantly determines the circuit performance [53], by junction engineering. Although the metal S/D extension might be an extreme junction [54,55] for avoiding this issue, it is still required in the near future to optimize the lateral dopant profile for enhancing the drive current with no degradation of the short-channel immunity.…”

The impact of Silicon-Cap on electrical characteristics of Schottky Barrier p-MOSFET with strained channel

“…However, this type of MOSFET can not achieve the high drive current because the current is limited by Schottky Barrier Height (SBH) at the source. To improve the current drivability of SBMOS, Ikeda et al [2] proposed a strained SiGe channel because carriers SBH are reduced by using SiGe. Strained SiGe channel pMOSFET has also received a great deal of attention recently due to its improved mobility [3].…”

Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction

“…Since 1 nm Pt can consume 1.3 nm Si to form PtSi [17], the strained-Si in the S/D region has been totally consumed and the silicide junction interface is in the deep buffer SiGe layer. Therefore, the Schottky junction in the vertical direction (from S/D to substrate) is the PtSiGe/relaxed-SiGe contact [5] and that in the lateral direction (from S/D to channel) is the PtSi/strained-Si contact. From the forward current-voltage characteristics of the source-substrate contact, as shown in Fig.…”

“…[1][2][3][4][5]. Moreover, the thermal budget to fabricate SBMOSFETs may be significantly reduced due to elimination of the doping process.…”