50 GHz High Photocurrent PIN-PD and Its Thermal Effect

Advances in High–Speed, High–Power Photodiodes: From Fundamentals to Applications

“…0.22 dBm (1.05 mW) at 300 GHz with 15.5 mA photocurrent and 2.01 dBm (1.59 mW) with the optimized bias at 18 mA photocurrent [132,133], while the output power is up to 4.04 dBm (2.53 mW) at 273 GHz with the optimized bias voltage at 18 mA photocurrent when this PD integrates with a taper slot antenna [134,135], as shown in Figure 18. The comparisons of 3-dB bandwidth, responsivity, saturation current or 1-dB compression saturation current and RF output power for different PDs [67,94,95,97,101,111,[113][114][115]119,[121][122][123][124]130,131,134,[136][137][138][139][140][141][142][143][144][145][146][147][148][149][150][151][152] are shown in Table 2. In brief, the PD saturation current and RF output power is affected by several factors, including device area, PD types, bias voltage, fabrication quality, CPW design, junction heat with high-bias voltages, short microwave stub [131], submounts, measurements and so on, which need to be considered comprehensively.…”

“…Using the wafer-bonding technique, InP-based UTC-PD bonded on the SiC substrate [39] can increase the RF output power to a mW-level, i.e., 0.22 dBm (1.05 mW) at 300 GHz with 15.5 mA photocurrent and 2.01 dBm (1.59 mW) with the optimized bias at 18 mA photocurrent [132,133], while the output power is up to 4.04 dBm (2.53 mW) at 273 GHz with the optimized bias voltage at 18 mA photocurrent when this PD integrates with a taper slot antenna [134,135], as shown in Figure 18. The comparisons of 3-dB bandwidth, responsivity, saturation current or 1-dB compression saturation current and RF output power for different PDs [67,94,95,97,101,111,[113][114][115]119,[121][122][123][124]130,131,134,[136][137][138][139][140][141][142][143][144][145][146][147][148][149][150][151][152] are shown in Table 2.…”

Photonic Radar for 3D Imaging: From Millimeter to Terahertz Waves

“…At lower frequencies, PIN photodiodes (PDs) based on materials such as InGaAs have superior conversion efficiency, allowing the photodetection of signals up to ∼ 50 GHz with a maximum output power of +14 dBm [69]. The efficiency drastically decreases as the output frequency approaches the sub-THz region due to low-velocity hole transport [70].…”