50-Gb/s ring-resonator-based silicon modulator

Abstract

We achieved 50-Gb/s operation of a ring-resonator-based silicon modulator for the first time. The pin-diode phase shifter, which consists of a side-wall-grating waveguide, was loaded into the ring resonator. The forward-biased operation mode was applied, which exhibited a V(π)L as small as 0.28 V · cm at 25 GHz. The driving voltage and optical insertion loss at 50-Gb/s were 1.96 V(pp) and 5.2 dB, respectively.

Coherent photonic beamformer for a Ka-band phased array antenna receiver implemented in silicon photonic integrated circuit

“…Hence, the waveguide is embedded upon the PN junctions and, when reverse biased, the waveguide experience a reduction of the free carriers. This leads to a low capacitance, resulting in a low-modulation efficiency, however with no static current consumption, which is an important feature [6], [7]. Comparing the three phase shifters, carrier injection and depletion phase shifters have the advantage of being faster than thermo-optic phase shifters, less power consuming, although producing a higher attenuation of the signal than thermal-optical phase shifters.…”

High-speed and efficient silicon modulator based on forward-biased pin diodes

“…Figure 5 has schematic views of the device we used in the experiments [23][24][25][26]. Modulators based on an asymmetric MZ interferometer [25] and a ring resonator [24] were respectively used in the experiment to extract the parameters and achieve high-speed large signal modulation. These experiments are described in the sections that follow in series.…”

“…These modulators need electric capacitors, which can dynamically store and release electrons and/or holes at the waveguide core. Thus, far, forward [20][21][22][23][24][25][26] and reverse-biased [20,[27][28][29][30][31][32][33][34] pn diodes, and MOS capacitors operated in accumulation mode [35][36][37][38] have been implemented, and such devices have all demonstrated high-speed operations above 40 Gb/s with reasonably small driving voltages and footprints. Modulators that are superior in terms of fundamental performance should be chosen to meet the requirements of continuously increasing data rates of transceivers.…”

Low-loss Electrically Controllable Vertical Directional Couplers

“…An interferometer-based optical switch could potentially operate without such optical loss [8][9][10]. However, such devices either are quite large [8,9], due to the difficulty of modulating the refractive index of the guiding material, or are based on guided surface plasmon polaritons (SPPs) [10], introducing large propagation losses of their own, requiring additional plasmonic couplers and complicating integration with silicon photonics.…”