50 Gb/s PAM4 Modulated 1065 nm Single-Mode VCSELs Using SMF-28 for Mega-Data Centers

Tan, Michael; Wang, Binhao; Sorin, Wayne V.; Mathai, S.; Rosenberg, Paul

doi:10.1109/lpt.2017.2707058

Cited by 10 publications

(6 citation statements)

References 11 publications

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“…The Si 3 N 4 Gaussian AWGs in this paper experience passband shifts ∼1.052 nm at T = 80°C, with an incurred loss of ∼0.2 dB. The 1065 nm VCSELs developed at HPE [4], [5] have a shift of 70 pm/°C and precludes the use of a Gaussian AWG for operating temperatures up to 80°C unless thermal tuning or laser tuning is implemented, which further increases the power consumption. As an alternative, flat-top AWGs were explored to reduce the power-penalty of high temperature operation.…”

Section: Cwdm Arrayed Waveguide Gratings (Awg)mentioning

confidence: 97%

“…This architecture allows any compute resource to access any part of a universal pool of memory, thus enabling applications to efficiently make use of local and larger remote memory via a low latency interconnect [3]. HPE's approach towards realizing a low cost, high bandwidth density optical interconnect consists of a Tb/s class, co-packaged CWDM optical engine [4], [5]. It has four wavelength bottom emitting VCSELs operating between 990-1065 nm [4], [5] and utilizes novel hybrid integration of photonics, electronics, and bulk optics which fit into a copackaged solder reflowable module.…”

mentioning

confidence: 99%

“…HPE's approach towards realizing a low cost, high bandwidth density optical interconnect consists of a Tb/s class, co-packaged CWDM optical engine [4], [5]. It has four wavelength bottom emitting VCSELs operating between 990-1065 nm [4], [5] and utilizes novel hybrid integration of photonics, electronics, and bulk optics which fit into a copackaged solder reflowable module. Current and next generation computing architectures all employ low-latency optical links that come in the form of parallel optical modules, active optical cables or QSFP (Quad Small Form-factor Pluggable) transceivers and it is believed that optical interconnects are still one of the key technologies that can continue to address the bandwidth, energy, and cost challenge required in the future.…”

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confidence: 99%

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Silicon Nitride (Si₃N₄) (De-)Multiplexers for 1-μm CWDM Optical Interconnects

Cheung

Tan

2020

J. Lightwave Technol.

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We discuss the design and demonstration of 4-channel coarse wavelength-division (de-)multiplexers based on cascaded Mach-Zehnder interferometer (MZI) lattice filters and arrayed waveguide gratings (AWG) on a 150 nm silicon nitride (Si 3 N 4) platform. The 1 × 4 (de-)multiplexers are designed for a channel separation of 25 nm and operate within 990-1065 nm for bottom emitting vertical cavity surface emitting lasers (VCSEL)-based optical links. For Si 3 N 4 Gaussian AWGs, we demonstrate crosstalk <−35 dB at the peak transmission band with insertion loss <0.5 dB. Measurements were performed over many dies, and passband standard deviations for channel 1-4 are 0.49, 0.66, 0.42, and 0.37 nm, respectively. Results for flat-top AWGs indicate crosstalk <−20 dB, with insertion loss <3 dB for the best devices. Flattop cascaded 2 nd order and 3 rd order MZI lattice filters show a minimum of crosstalk <−15 dB and <−20 dB, respectively. The pass-band temperature shift was determined to be 14.5 pm/°C, which is lower than reported values for silicon. The device footprint of the Gaussian and flat-top AWGs are both ∼670 × 200 µm. The device footprint of the flat-top cascaded 2 nd order and 3 rd order lattice filters are 1160 × 470 µm and 1570 × 470 µm, respectively. We believe the Si 3 N 4 platform has potential for its use in CWDM and possibly DWDM transceiver/optical-modules for data/computer communication in high temperature environments up to 80°C. Index Terms-Optical interconnects, photonic integrated circuits, silicon nitride, silicon photonics. I. INTRODUCTION T HERE continues to be an increased demand for high bandwidth density optical interconnects for future mega data centers, long-haul communications, and peta/exa-scale high performance computing (HPC). One study suggests annual global data center IP traffic will reach 20.6 Zettabytes (ZB) by the end of 2021; 94% of those workloads will be processed by cloud data centers and 6% by traditional data centers [1]. In another study, it is estimated by 2020, HPC peak performance will exceed 1 exaflop and require 800 million optical channels with each channel operating at ∼25 Gb/s, 1mW/Gb/s, and at $25/Tb/s [2]. Recently, Hewlett Packard Enterprise announced a new memory centric architecture where CPUs and a universal pool of memory (DRAM, SSD, NVRAM, etc.) are interconnected through a high

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Section: Cwdm Arrayed Waveguide Gratings (Awg)mentioning

confidence: 97%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Silicon Nitride (Si₃N₄) (De-)Multiplexers for 1-μm CWDM Optical Interconnects

Cheung

Tan

2020

J. Lightwave Technol.

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“…VCSEL link distance extension techniques have been investigated to extend the transmission distance to a few kilometers for mega-data centers. 1060 nm single-mode VCSELs over 2 km using single mode fibers have been demonstrated at 40 Gb/s NRZ [22] and 50 Gb/s PAM4 [23]. In addition, long-wavelength (1310/1550 nm) VCSELs have also attracted researchers' interest.…”

Section: Vertical-cavity Surface-emitting Lasersmentioning

confidence: 99%

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Wang¹,

Huang²,

Chen³

et al. 2019

PIER

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Datacenters become an important part of technical infrastructure. The Datacom traffic grows exponentially to satisfy the demands in IT services, storage, communications, and networking to the growing number of networked devices and users. High bandwidth and energy efficient optical interconnects are critical to improve overall productivity and efficiency in data centers. Mega-data centers are expected to address the power consumption and the cost in which optical interconnects contribute quite a large part. Silicon photonics is a promising platform to offer savings in power and potential increase in bandwidth for Datacom. Several modulation techniques are developed in silicon photonics to reduce the optical mode volume or enhance the light matter effect to further improve the modulation efficiency. Many other materials such as III-V and LiNbO 3 are integrated on silicon photonics to maximize the optical link performance. This paper reviews several modulation techniques for Datacom, from vertical-cavity surface-emitting laser (VCSEL) direct modulation to silicon photonics modulators then to hybrid silicon modulators.

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“…The transmission of high data rate signals over single mode fiber (SMF) based optical links using VCSELs has been extensively researched. Various studies based on SMF have been reported for optical transmission employing single mode VCSELs operating in 1065–1550 nm [5, 6 ], where despite having the higher modal bandwidth to support high data rates in data centres, the corresponding transceivers are not power efficient leading to higher deployment cost specially for short reach DCIs. Hence, VCSEL and MMF based IM‐DD transmission systems operating around 850 nm could be an attractive solution in order to achieve cost efficiency and low power consumption [3 ].…”

Section: Introductionmentioning

confidence: 99%

Linearly polarised modes enabled PAM‐4 data transmission over few‐mode fibre for data centre interconnect

Iqbal

Raza

et al. 2020

Electron. lett.

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This Letter proposes a high data rate optical transmission system for data centre interconnects, where the authors employ vertical cavity surface emitting lasers (VCSEL) and graded index few‐mode fibre (GI‐FMF) having modal bandwidth of around 24.3 GHz.km to enhance the link capacity and range. Additionally, they consider PAM‐4 modulated data transmission at the rate of 2 × 100 Gbps using a pair of VCSELs and employing mode group division multiplexing of two linearly polarised (LP) modes normalLP01 and normalLP11 of the GI‐FMF. Digital signal processing techniques are applied at the receiver to process the received PAM‐4 signals for equalisation in order to mitigate the channel impairments. Furthermore, standard OM3 and OM4 fibres are considered as a benchmark to compare the transmission performance of the designed GI‐FMF. They observe that the designed GI‐FMF supports longer transmission distance for both normalLP01 and normalLP11 modes upto 900 and 450 m at 50 and 100 Gbps data rates, respectively, while achieving lower receiver sensitivities for forward error correction limit of 3.8×10−3. The proposed optical transmission system can be a potential applicant in future data centre networks supporting transmission rates in 800 Gbps to 1.6 Tbps range.

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50 Gb/s PAM4 Modulated 1065 nm Single-Mode VCSELs Using SMF-28 for Mega-Data Centers

Cited by 10 publications

References 11 publications

Silicon Nitride (Si₃N₄) (De-)Multiplexers for 1-μm CWDM Optical Interconnects

Silicon Nitride (Si₃N₄) (De-)Multiplexers for 1-μm CWDM Optical Interconnects

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Linearly polarised modes enabled PAM‐4 data transmission over few‐mode fibre for data centre interconnect

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50 Gb/s PAM4 Modulated 1065 nm Single-Mode VCSELs Using SMF-28 for Mega-Data Centers

Cited by 10 publications

References 11 publications

Silicon Nitride (Si3N4) (De-)Multiplexers for 1-μm CWDM Optical Interconnects

Silicon Nitride (Si3N4) (De-)Multiplexers for 1-μm CWDM Optical Interconnects

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Linearly polarised modes enabled PAM‐4 data transmission over few‐mode fibre for data centre interconnect

Contact Info

Product

Resources

About

Silicon Nitride (Si₃N₄) (De-)Multiplexers for 1-μm CWDM Optical Interconnects

Silicon Nitride (Si₃N₄) (De-)Multiplexers for 1-μm CWDM Optical Interconnects