50% continuous-wave wallplug efficiency from 1.53μm-emitting broad-area diode lasers

Abstract

Articles you may be interested inContinuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature Appl. Phys. Lett. 97, 071114 (2010); 10.1063/1.3483133 Room temperature operated 3.1 m type-I GaSb-based diode lasers with 80 mW continuous-wave output power Appl. Phys. Lett. 92, 171111 (2008); 10.1063/1.2919720 GaAs-based room-temperature continuous-wave 1.59 m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy Appl. Phys. Lett. Design considerations and analytical approximations for high continuous-wave power, broad-waveguide diode lasers Appl. Phys. Lett. 74, 3102 (1999); 10.1063/1.124075 High-power (>10 W) continuous-wave operation from 100-m-aperture 0.97-m-emitting Al-free diode lasers

Electrically injected 164µm emitting In065Ga035As 3-QW laser diodes grown on mismatched substrates by MOVPE

“…It is noted that the T 0 values, obtained here, are generally small due to inherently weak carrier confinement at the interface between AlInGaAs SCH and InP cladding layer as well as that of AlInGaAs SCH and InGaAs QW [27][28] and due to Auger recombination [29]. Therefore, together with optimization in the heterostructure, T 0 and T 1 can be somewhat improved [30]. In addition, a significant blue shift in the lasing wavelength was observed from the device grown on Si substrate (λ lasing = 1623 nm), while the devices grown on either InP or GaAs substrates exhibit similar lasing wavelength (λ lasing = 1652 ∼ 1654 nm), as shown in Fig.…”

Engineering and modeling perspectives on photocatalytic reactors for water treatment

“…This low efficiency is attributed to a few factors, such as (1) the low conversion efficiency from electricity to photons (wall-plug efficiency), (2) photon losses in the reactors due to radiation scattering, (3) the fraction of the absorbed photons that results in the production of e -/h + pairs, and (4) the high rate of e -/h + recombination in the catalyst. The low conversion efficiency from electricity to photons may be improved by advances in electrical engineering (Garrod et al, 2014), such as the development of highly efficient LED light sources, while the reduction of the rate of recombination of electrons and holes is one of the primary goals of material scientists working on new photocatalysts (e.g., Z-scheme heterojunctions, plasmonic, defects engineering, element doping etc.) (Wang et al, 2018).…”

Analysis of Threshold Characteristics of Short-Wavelength Semiconductor Lasers

“…This parameter has been widely recognized and applied over the past 50 years [13], [14]. At the same time, the use of characteristic temperature can predict the continuous operation performance of the device to a certain extent, helping us optimize the device [5].…”