50 A vertical GaN Schottky barrier diode on a free-standing GaN substrate with blocking voltage of 790 V

Tanaka, Nariaki; Hasegawa, Kazuhide; Yasunishi, Kota; Murakami, Noriaki; Oka, Tohru

doi:10.7567/apex.8.071001

Cited by 118 publications

(76 citation statements)

References 29 publications

(35 reference statements)

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“…4,5,[27][28][29] Among the various methods for the growth of freestanding GaN substrates, hydride-vaporphase epitaxy (HVPE) is the most well established, and wafers with diameters of 2-in. or more have been prepared and used in the mass production of optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fujikura

Konno

Yoshida

et al. 2017

Jpn. J. Appl. Phys.

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Thick (20–30 µm) layers of highly pure GaN with device-quality smooth as-grown surfaces were prepared on freestanding GaN substrates by using our advanced hydride-vapor-phase epitaxy (HVPE) system. Removal of quartz parts from the HVPE system markedly reduced concentrations of residual impurities to below the limits of detection by secondary-ion mass spectrometry. Appropriate gas-flow management in the HVPE system realized device-quality, smooth, as-grown surfaces with an excellent uniformity of thickness. The undoped GaN layer showed insulating properties. By Si doping, the electron concentration could be controlled over a wide range, down to 2 × 1014 cm−3, with a maximum mobility of 1150 cm2·V−1·s−1. The concentration of residual deep levels in lightly Si-doped layers was in the 1014 cm−3 range or less throughout the entire 2-in. wafer surface. These achievements clearly demonstrate the potential of HVPE as a tool for epitaxial growth of power-device structures.

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Section: Introductionmentioning

confidence: 99%

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fujikura

Konno

Yoshida

et al. 2017

Jpn. J. Appl. Phys.

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“…ВАХ Шоттки диода площадью 1.5 · 10 −4 см 2 , полу-ченного вакуумным напылением Ni на пленку n-GaN толщи-ной 9 мкм, на медной подложке. обратный ток 900 мкА; прямое напряжение 2.3 В, плот-ность прямого тока 550 А/см 2 [13,14]. Таким образом, изготовленный нами тестовый образец демонстрирует рабочие характеристики, приемлемые для его исполь-зования при коммутации больших мощностей.…”

Section: изготовление и тестирование образца вертикального диода шотткиunclassified

Отделение слабо легированных пленок n-GaN микронной толщины от подложек, основанное на эффекте поглощения ИК излучения в сапфире

Voronenkov¹,

Virko²,

Kogotkov³

et al. 2017

Физика И Техника Полупроводников

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Сильное поглощение излучения СО2-лазера в сапфире использовано для отделения пленок GaN от темплейтов GaN на сапфире. Лазерное сканирование сапфировой подложки приводило к термической диссоциации GaN на интерфейсе GaN/сапфир и отделению пленки GaN от сапфира. Пороговая плотность энергии лазерного излучения, при которой начиналась диссоциация n-GaN, составила 1.6±0.5 Дж/см2. Изучено распределение механических напряжений и поверхностная морфология пленок GaN и сапфировых подложек до и после лазерного отделения методами рамановской спектроскопии, атомно-силовой микроскопии и растровой электронной микроскопии. Образец вертикального диода Шоттки с величиной плотности прямого тока 100 А/см2 при напряжении 2 B и максимальным обратным напряжением 150 В изготовлен на основе отделенной пленки n-GaN толщиной 9 мкм. DOI: 10.21883/FTP.2017.01.8325

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“…Although GaN SBDs have shown excellent on-state characteristics and high blocking voltage, high reverse leakage current at high voltages remains a concern which has been speculated to be due to defects in the epilayer [9,10]. GaN pin diodes have been demonstrated with breakdown voltage approaching 4 kV and pulsed current operation up to 400 A [11,12].…”

Section: Introductionmentioning

confidence: 98%

Comparative performance assessment of SiC and GaN power rectifier technologies

Chowdhury

Chow

2016

Phys. Status Solidi C

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Silicon carbide and gallium nitride based Schottky and pin junction power rectifiers offer different performance trade‐offs in terms of metrics such as forward voltage drop, switching energy loss and surge current capability. The goal of this paper is to identify the application space for different rectifier technologies. An analytical comparison between the performance of different power rectifier diodes for breakdown voltages ranging from 600V to over 8 kV is presented. It is shown that although GaN SBD offers some advantage over SiC diodes due to lower losses, low surge current capability of GaN may hinder its widespread adoption in applications. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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50 A vertical GaN Schottky barrier diode on a free-standing GaN substrate with blocking voltage of 790 V

Cited by 118 publications

References 29 publications

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Отделение слабо легированных пленок n-GaN микронной толщины от подложек, основанное на эффекте поглощения ИК излучения в сапфире

Comparative performance assessment of SiC and GaN power rectifier technologies

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