5.8 New Thin Film Technologies

Ehrhart, P.; Waser, Rainer

doi:10.1016/b978-012654640-8/50014-6

Cited by 2 publications

(2 citation statements)

References 15 publications

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“…In recent years, various techniques of film deposition on Si substrates have been developed for the construction of integrated circuits: Physical vapor deposition (PVD) techniques, such as sputtering and pulsed-laser deposition, chemical vapor deposition (CVD), and chemical solution deposition (CSD), were adopted by many researchers and manufacturers as conventional techniques for the fabrication of Si-based electronic devices. 1,2) Currently, a film deposition technique for achieving very large scale or ultra-largescale integration on Si substrate is required to realize some ideal characteristics as follows: (i) crystallizing the film at a low temperature, (ii) conformal deposition on complexshaped substrates, and (iii) easy and accurate control of chemical composition in multicomponent films. However, none of the conventional techniques for film deposition have satisfied these reqirements simultaneously; in particular, even a direction of the solution has never been clarified in terms of their requirement in (i) film crystallization at a low temperature to prevent the thermal damage of integrated circuits on Si substrate, which is essential for achieving the circuit integration in next-generation devices.…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Deposition of Polycrystalline Titanium Oxide Thin Film on Si Substrate Using Supercritical Carbon Dioxide Fluid

Uchida

Otsubo

Itatani

et al. 2005

Jpn. J. Appl. Phys.

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A novel technique for the deposition of oxide thin films using supercritical carbon dioxide (CO2) fluid was proposed for the large-scale circuit integration on a silicon (Si) substrate at a low temperature. Thin films of titanium oxide (TiO2) as a model material were fabricated from organometallic Ti(Oi-Pr)2(dpm)2 source on (100)Si substrates in supercritical CO2 fluid. The film deposition was accomplished using a flow-type supercritical fluid deposition apparatus designed on the basis of metal-organic chemical vapor deposition (MOCVD) systems. Flat films were fabricated on (100)Si substrates at a faster source delivery (fluid flow rate: 2.0–10.0 cm3/min), while granular deposits owing to homogeneous nucleation in the bulk supercritical CO2 fluid appeared on the substrates at a slower source delivery (fluid flow rate: 1.0 cm3/min). The amount of TiO2 deposited decreased gradually with increasing the temperature of CO2 fluid, which would be related to the change in the density of CO2 fluid. The crystalline TiO2 film was deposited on the (100)Si substrate at a substrate temperature of 80–120°C and fluid temperature/pressure of 40°C/8.0 MPa, at which the decomposition of organometallic Ti(Oi-Pr)2(dpm)2 source was accomplished. These results indicated that the supercritical CO2 deposition technique is suitable for the large-scale circuit integration on Si substrates.

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Section: Introductionmentioning

confidence: 99%

Low-Temperature Deposition of Polycrystalline Titanium Oxide Thin Film on Si Substrate Using Supercritical Carbon Dioxide Fluid

Uchida

Otsubo

Itatani

et al. 2005

Jpn. J. Appl. Phys.

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“…The most important methods in the field of interest are subdivided into physical and chemical methods [35]. Physical methods may be characterized by an adsorption and condensation process of the atoms or molecules at the substrate surface.…”

Section: Thin Film Deposition Techniquesmentioning

confidence: 99%

Synthesis and Humidity Sensing Investigations of Nanostructured ZnSnO<sub>3</sub>

Rama¹,

Yadav²,

Chandkiram³

2011

JST

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In this paper zinc stannate (ZnSnO 3 ) nanoparticles was synthesized by a chemical precipitation method. The synthesized samples were characterized using X-ray powder diffraction (XRD), Differential scanning calorimetry (DSC) and UV-Visible absorption spectroscopy. Sensing material was made as pellet by hydraulic press machine under uniform pressure of 616 MPa. Then the material was annealed at 600˚C. Surface morphologies of the samples were analyzed using Scanning electron microscopy (SEM) for pellet of different weight ratio annealed at 600˚C. The XRD pattern indicates that ZnSnO 3 has a perovskite phase with an orthorhombic structure having minimum crystallite size 4 nm. Further, humidity sensing investigations of these sensing materials were done. Our result indicate that ZnSnO 3 in form of pellet annealed at 600˚C for 1:4 weight ratio was most sensitive of humidity in comparison to pure SnO 2 under same conditions. Maximum sensitivity of the sample was 3 GΩ/% RH which is better in comparison to pure SnO 2 . The results were reproducible up to ± 77% after 2 months of observations.

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5.8 New Thin Film Technologies

Cited by 2 publications

References 15 publications

Low-Temperature Deposition of Polycrystalline Titanium Oxide Thin Film on Si Substrate Using Supercritical Carbon Dioxide Fluid

Low-Temperature Deposition of Polycrystalline Titanium Oxide Thin Film on Si Substrate Using Supercritical Carbon Dioxide Fluid

Synthesis and Humidity Sensing Investigations of Nanostructured ZnSnO<sub>3</sub>

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5.8 New Thin Film Technologies

Cited by 2 publications

References 15 publications

Low-Temperature Deposition of Polycrystalline Titanium Oxide Thin Film on Si Substrate Using Supercritical Carbon Dioxide Fluid

Low-Temperature Deposition of Polycrystalline Titanium Oxide Thin Film on Si Substrate Using Supercritical Carbon Dioxide Fluid

Synthesis and Humidity Sensing Investigations of Nanostructured ZnSnO&lt;sub&gt;3&lt;/sub&gt;

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Synthesis and Humidity Sensing Investigations of Nanostructured ZnSnO<sub>3</sub>