5‐4: Stretchable Oxide TFTs for Wearable Electronics

Li, Xiuling; Hasan, Md. Mehedi; Jeon, Jaekwon; Jang, Jin

doi:10.1002/sdtp.11578

Cited by 11 publications

(13 citation statements)

References 14 publications

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“…TFTs are essential as switching components for flexible displays, sensor arrays, memories, and wearable electronics 15. Various classes of semiconductor materials have been studied on their suitability to produce flexible TFTs, which include organic semiconductors, metal oxides (ZnO, In 2 O 3, InGaZnO, etc.…”

Section: Introductionmentioning

confidence: 99%

Printed, Highly Stable Metal Oxide Thin‐Film Transistors with Ultra‐Thin High‐κ Oxide Dielectric

Carlos

Leppäniemi

Sneck

et al. 2020

Adv Elect Materials

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Lately, printed oxide electronics have advanced in the performance and low‐temperature solution processability that are required for the dawn of low‐cost flexible applications. However, some of the remaining limitations need to be surpassed without compromising the device electronic performance and operational stability. The printing of a highly stable ultra‐thin high‐κ aluminum‐oxide dielectric with a high‐throughput (50 m min−1) flexographic printing is accomplished while simultaneously demonstrating low‐temperature processing (≤200 °C). Thermal annealing is combined with low‐wavelength far‐ultraviolet exposure and the electrical, chemical, and morphological properties of the printed dielectric films are studied. The high‐κ dielectric exhibits a very low leakage‐current density (10−10 A cm−2) at 1 MV cm−1, a breakdown field higher than 1.75 MV cm−1, and a dielectric constant of 8.2 (at 1 Hz frequency). Printed indium oxide transistors are fabricated using the optimized dielectric and they achieve a mobility up to 2.83 ± 0.59 cm2 V−1 s−1, a subthreshold slope <80 mV dec−1, and a current ON/OFF ratio >106. The flexible devices reveal enhanced operational stability with a negligible shift in the electrical parameters after ageing, bias, and bending stresses. The present work lifts printed oxide thin film transistors a step closer to the flexible applications of future electronics.

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Section: Introductionmentioning

confidence: 99%

Printed, Highly Stable Metal Oxide Thin‐Film Transistors with Ultra‐Thin High‐κ Oxide Dielectric

Carlos

Leppäniemi

Sneck

et al. 2020

Adv Elect Materials

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“…The design concept for stretchable oxide TFTs includes (a) neutral‐plane TFT arrays on PI substrates for cutting by a laser and transfer onto PDMS substrate; (b) spin coating and detachment of PDMS from release layer on glass; and (c) an optical image of TFT arrays on PDMS islands selectively treated by UV/O 3 (islands: 3 × 3 mm 2 , intervals: 3 mm) 18 …”

Section: Stretchable Oxide Tftsmentioning

confidence: 99%

“…The stretchability of the oxide TFTs on PDMS substrate is shown above, with the evolution of transfer curves as a function of stretching strain for the oxide TFT. The TFT performance is measured in the relaxed condition after being stretched 10 times for each strain 18 …”

Section: Stretchable Oxide Tftsmentioning

confidence: 99%

Stretchable Oxide TFT for Wearable Electronics

Li¹,

Jang²

2017

Information Display

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St retchable electronics can enable innovative applications such as electronic textiles, wearable displays, and sensors. One of the key challenges of this technology is to design a device/system that tolerates high levels of strain (>>1 percent) without degradation of performance. This challenge entails numerous research issues covering a broad range of fields, including materials, device architectures, mechanics, and fabrication methods. 1 A stretchable thin-film transistor (TFT) is a basic building block for electronic circuits, displays, and sensors. Table 1 presents a brief summary of stretchable TFTs reported in the literature. Although mechanically robust materials and components have been improved recently, fabrication processes with high yield and device stability under mechanical strain remain challenging issues in terms of commer-cialization. [2][3][4][5][6] Of note are some efforts in ruggedization of devices that show excellent performance but less "softness." Wavy, coiled, net-shaped, or spring-like structures have also been used to accommodate large mechanical deformations. 7-10 In addition, active devices on stiff islands that are interconnected with stretchable conductors have proven successful in achieving highly stretchable electronics. [10][11][12][13][14] Stretchable Oxide TFT for Wearable ElectronicsOxide thin-film transistors (TFTs) in a neutral plane are shown to be robust under mechanical bending and thus can also be suitable for TFT backplanes for stretchable electronics. The oxide TFTs when built on a PI substrate can then be transferred onto a PDMS substrate and applied to stretchable electronics. The PDMS regions on the TFT parts are UV/O 3 treated for stiff PDMS and then the TFTs are transferred onto this region. This substrate with TFTs applied can then be stretched up to 50 percent without significant performance degradation. Therefore, stretchable oxide TFT arrays can be used for stretchable displays and sensors.

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“…However, it faces the problems of wettability and adhesion of some materials that are laid on it, because its surface is generally hydrophobic. In order to make it to be hydrophilic, some methods such as oxygen or air plasma treatment, chemical modification, and UV ozone exposure have been used. That means that the surface of the PDMS film should become hydrophilic by oxidation treatments before individual devices and metal wirings were fabricated on it.…”

Section: Introductionmentioning

confidence: 99%

Reversible surface modification of polydimethylsiloxane film for stretchable display

Kim

Yoon

et al. 2019

J Soc Info Display

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A polydimethylsiloxane (PDMS) film is the most widely used elastomeric substrate for stretchable electronic devices. However, it is difficult to directly deposit a metal layer on the PDMS film because many defects such as cracks and wrinkles in the metal layer form too easily. This problem can be addressed by modifying the film surface rigidly through some surface oxidation processes. However, this rigid surface should be removed after the fabrication process is completed because the surface may induce lots of cracks on the PDMS film when the fabricated stretchable electronic device is used in a stretching state. In this study, a wet etching process using a buffered HF (BHF) solution is used to effectively remove the rigid surfaceformed on the PDMS film and to dramatically reduce the crack lines formed after the PDMS film stretching.Hence, areversible process for controlling the mechanical properties of the PDMS film surface was established. According tosome analysis results, the rigid surface formed by UV ozone exposure on the PDMS film was found to have apolysiloxane network structure including more silicon atoms bound to three oxygens, and the surface etched by BHFsolution was found to be recovered to the similar structure with that of the PDMS film. K E Y W O R D Sbuffered HF solution etching, polydimethylsiloxane (PDMS) film, stretchable display, reversible surface modification, UV ozone exposure

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5‐4: Stretchable Oxide TFTs for Wearable Electronics

Abstract: We report a simple method to realize stretchable oxide TFTs by selectively modifying the surface properties of PDMS elastic substrate. The devices can be stretched up to 50% with negligible degradation in the electrical performances, making it a promising approach to wearable electronics.

Cited by 11 publications

References 14 publications

Printed, Highly Stable Metal Oxide Thin‐Film Transistors with Ultra‐Thin High‐κ Oxide Dielectric

Printed, Highly Stable Metal Oxide Thin‐Film Transistors with Ultra‐Thin High‐κ Oxide Dielectric

Stretchable Oxide TFT for Wearable Electronics

Reversible surface modification of polydimethylsiloxane film for stretchable display

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