5-100 GHz InP coplanar waveguide MMIC distributed amplifier

Majidi-Ahy, R.; Nishimoto, C.; Riaziat, M.; Glenn, M.; Silverman, S.; Weng, Shou-Hsien; Pao, Y.C.; Zdasiuk, G.; Bandy, S.; Tan, Zoilo C. H.

doi:10.1109/22.64584

Cited by 83 publications

(13 citation statements)

References 12 publications

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“…Since DTV broadcasting can provide a super-sharp high-definition television (HDTV) program, interactivity service, and data service, it has become very attractive for mobile communications devices, such as laptops and portable computers, to be equipped with a DTV receiver in order to enhance their multimedia functions. For this purpose, a low-profile planar metal-plate monopole antenna for DTV signal reception in the UHF band (channels 14 to 69 [2]) for laptops has been reported recently [3]. This reported antenna, however, is designed to protrude from the casing of the laptop for DTV signal reception.…”

Section: Introductionmentioning

confidence: 97%

“…This development of MMICs has increased the demand for transmission lines that enable the propagation of microwave and millimeterwave signals. In microwave and millimeter-wave integrated circuits, conventional planar transmission-line structures, such as microstrip lines and coplanar waveguides (CPWs), are widely used at present [1,2]. However, the geometric structure of these conventional transmission lines has dielectric loss and dispersion characteristics due to the semiconductor substrate supporting the transmission line, which degrades circuit performance in the highfrequency range.…”

Section: Introductionmentioning

confidence: 99%

“…As shown in the figure, the system ground plane (size 200 ϫ 300 mm 2 ) is considered as the supporting metal frame for the display of a practical laptop. The proposed antenna is comprised of a U-shaped metal-plate monopole element (length 79.5 mm, cross-sectional area 5 ϫ 10 mm 2 ) and an antenna ground plane (size 10 ϫ 30 mm 2 ). In this study, the metal-plate monopole, the antenna ground plane, and the system ground plane were all fabricated using a 0.2-mm-thick brass sheet.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Fabrication of a band-reject filter using dielectric-supported air-gapped microstriplines

Baek

Shin

et al. 2004

Microw. Opt. Technol. Lett.

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Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Fabrication of a band-reject filter using dielectric-supported air-gapped microstriplines

Baek

Shin

et al. 2004

Microw. Opt. Technol. Lett.

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“…Two design approaches are commonly adopted to alleviate the limitation for bandwidth extension in practical design, namely, the distributed amplifier (DA) topology [1]- [3], [6]- [11] and the inductive peaking techniques [12]- [17]. Fig.…”

Section: Introductionmentioning

confidence: 99%

A Miniaturized 70-GHz Broadband Amplifier in 0.13-$\mu {\hbox{m}}$ CMOS Technology

Jin

Hsu²

2008

IEEE Trans. Microwave Theory Techn.

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A 70-GHz broadband amplifier is realized in a 0.13-m CMOS technology. By using five cascaded commonsource stages with the proposed asymmetric transformer peaking technique, the measured bandwidth and gain can reach 70.6 GHz and 10.3 dB under a power consumption ( DC ) of 79.5 mW. Within the circuit bandwidth, the maximum input and output reflection coefficients are 6.1 and 10.8 dB, respectively. The group delay variation is 12.0 ps, and the output 1-dB compression point is 0.2 dBm at 5 GHz. With the miniaturized transformer design, the occupied core area of the circuit is only 0.05 mm 2 . This amplifier demonstrates a gain-bandwidth product of 231 GHz and a GBW DC up to 2.9 GHz/mW. Index Terms-Broadband amplifier, CMOS, common-source (CS) stage, gain-bandwidth product (GBW), transformer peaking.

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“…One very impressive MMIC, recently reported by Varian, is a 5-100+ GHz distributed amplifier. [6] This amplifier has a relatively flat gain and noise figure, both in the 5-6 dB range over its frequency band.…”

Section: Current Research Emphasismentioning

confidence: 99%

US research activities on InP-based microwave and millimeter-wave devices and circuits

Shupe¹,

Fathimulla²,

Aina³

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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Historical PerspectiveFor the past 10-15 years there has been a growing interest in the development of very high performance microwave and millimeter-wave devices and circuits on InP substrates. Indeed, many of the records for noise figure, frequency of operation, power, etc. are held by InP-based devices and circuits. The U.S. has been and continues to be the leader in this field, primarily because the U.S. Department of Defense is a major source of funding for this work and is seen as the major customer for the resulting products. The recent successes of high-technology weapons in the Gulf War can only increase the interest of DoD and the U.S. Congress in advanced technologies such as InP-based microwave/millimeter-wave IC's.In the late 1970's to early 1980's much of the research on InP-based devices centered around IMPATTs and Gunn diodes. These InP devices provided higher peak powers, higher gains, and higher operating frequencies than similar devices based on GaAs or silicon. This made it possible, for example, to develop solid-state transmitters for low power radars. U.S. companies, such as Varian, are marketing InP IMPATTs and Gunn diodes. Allied-Signal, as an example, manufactures a weather radar containing InP IMPATTs for commercial aircraft.In the early to mid-1980's, there was an emphasis on research on InP MISFETs. This work was stimulated by three properties of InP:1. The Fermi level can be unpinned at the InP surface. Electrons in InP have very high peak and saturation velocities.3. InP has a higher thermal conductivity than GaAs.These properties pointed toward excellent microwave and millimeter-wave InP power FETs. They also encouraged work on normally-off, accumulation-mode or inversion-mode devices having low quiescent power. Many of these promises were realized in U.S. research labs. However, the InP MISFET did not progress toward a marketable product primarily because its electrical characteristics were not stable.From the late 1980's to the present, research on InP-based microwave/millimeter-wave devices has centered around FETs and HBTs containing various heterostructures of InP, InGaAs, and InAIAs. The emphasis of this research has been to push fT, f, , , , and noise figure to the limits imposed by the materials involved. The records for these performance measures are held by InP-based devices with improvements being reported continually in the technical literature. Many of these devices are being used in monolithic IC's, which also exhibit record performances in the microwave/millimeter-wave spectrum. xix _ _ -~

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5-100 GHz InP coplanar waveguide MMIC distributed amplifier

Cited by 83 publications

References 12 publications

Fabrication of a band-reject filter using dielectric-supported air-gapped microstriplines

Fabrication of a band-reject filter using dielectric-supported air-gapped microstriplines

A Miniaturized 70-GHz Broadband Amplifier in 0.13-$\mu {\hbox{m}}$ CMOS Technology

US research activities on InP-based microwave and millimeter-wave devices and circuits

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