4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET)

Abstract

4H-SiC MOSFETs with a novel channel structure are presented. In the novel MOSFETs, a buried n-channel is sandwiched by a thin p-layer and p-body (SC-MOSFET). By the introduction of properly-designed p-layer beneath the gate oxide, more electrons can travel apart from the MOS interface, leading to higher channel mobility especially at high gate voltage. In this study, the effects of channel structure on the 4H-SiC (0001) MOSFET performance are investigated, and the characteristics of inversion-type MOSFET, ACCUFET and SC-MOSFET were compared. The SC-MOSFET, processed by N 2 O oxidation, with a 0.10 µm-thick channel showed a high mobility of 40 cm 2 /Vs with a normally-off characteristic at 2.5 MV/cm.

Influence of gate bias of MISiC-FET gas sensor device on the sensing properties

“…Research has been carried out into both JFETs and MOSFETs with buried channels [19]. Power devices based on SiC with a similar structure have also been investigated [20]. The electrons from the source have to get over the barrier at the intrinsic gate in order to reach the drain.…”