4D-2 High Volume Production of a Fully Matched 5050 PCS-CDMA-BAW Duplexer

Schmidhammer, E.; Heinze, H.; Schmiedgen, M.; Mayer, Markus; Link, Andreas

doi:10.1109/ultsym.2006.95

Cited by 11 publications

(4 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The coarse bank has a tuning range of 1024 ppm with 32 ppm steps. Its tuning range is wide enough to correct the BAW resonator process variation [5]. The fine bank has 50 ppm tuning range with very fine 0.2 ppm steps.…”

Section: Rm Ffiffiffiffi Ffimentioning

confidence: 99%

Low-noise high-resolution BAW-based high-frequency oscillator

Guillot¹,

Philippe²,

Berland

et al. 2009

Electron. Lett.

View full text Add to dashboard Cite

International audienceThe design of a 500 MHz oscillator in a 65 nm CMOS process using a 2 GHz bulk acoustic wave (BAW) resonator is presented. A digital frequency control is implemented using a switched capacitor bank in parallel to the resonator. The tuning range is up to 500 kHz with a minimum step of 200 Hz. The oscillator core uses a differential topology and is designed for low phase noise (2128 dBc/Hz at 100 kHz offset) at low power consumption (0.9 mW). It is followed by a low-noise divider, which provides a 500 MHz output with a phase noise of 2139 dBc/Hz at 100 kHz offset from the carrier

show abstract

Section: Rm Ffiffiffiffi Ffimentioning

confidence: 99%

Low-noise high-resolution BAW-based high-frequency oscillator

Guillot¹,

Philippe²,

Berland

et al. 2009

Electron. Lett.

View full text Add to dashboard Cite

show abstract

“…AIN and ZnO-based resonators have been developed some ten years ago [3,4] for in-liquid operation. The technologies for fabricating AIN-based BAW resonators, either as solidly mounted resonators (SMRs) or as free-standing film bulk acoustic resonators (FBARs), are mature and already in production for electronic applications [5,6]. Besides, thin-film-based resonators have lower fabrication costs and offer the possibility of integration with CMOS technologies and fabrication of arrays of sensors for parallel or multi-detection [7].…”

Section: Introductionmentioning

confidence: 99%

Gravimetric biosensor based on a 1.3 GHz AlN shear-mode solidly mounted resonator

DeMiguel-Ramos

Díaz-Durán

Escolano

et al. 2017

Sensors and Actuators B: Chemical

View full text Add to dashboard Cite

We investigate the performance of solidly mounted resonators based on Ir/tilted-AlN/Ir piezoelectric stacks as biosensors. These films are deposited by varying the pressure, the cathode power and the temperature of a two-step process based on depositing (00 2)-til ted AIN active layers over an (10 3)-oriented AIN seed layer. To minimize the influence of the temperature coefficient of frequency on the stability of the biosensor, we use insulating acoustic mirrors made of layers of Si0 2 and amorphous TaO x with non-\/4 thicknesses, which enables to reduce the TCF to-14 ppm/°C. The mass loading of the resonators with SÍO2 thin films results in a sensitivity of 1800 kHz/pg cm 2. Surface functionalization consists on the binding of silane groups on plasma oxidized SÍO2 surfaces. After a glutaraldehyde link, streptavidin is bonded to the surface to receive biotinylated receptors for several species. We test thrombin-binding aptamer (TBA29 against thrombin, and IgG antibody against immunoglobulin). The sensors response to species of different molecular weight like TBA-29 (9.75 kDa) or IgG antibody (150 kDa) is monitored. Finally, we assess the response of the biosensors to different thrombin concentrations (ranging from 4 nM to 270 nM) on surfaces functionalized with the TBA29 aptamer.

show abstract

“…substrate either by an air cavity, which gives rise to the so-called film bulk acoustic resonators [6], or by placing an acoustic reflector composed of a set of alternated layers of high and low acoustic impedance among the piezoelectric stack and the substrate, in which case we obtain solidly mounted resonators (SMR) [7],…”

Section: Introductionmentioning

confidence: 99%

Low-thickness high-quality aluminum nitride films for super high frequency solidly mounted resonators

Iborra¹,

Clément²,

Capilla³

et al. 2012

Thin Solid Films

View full text Add to dashboard Cite

We investigate the sputter growth of very thin aluminum nitride (AIN) films on iridium electrodes for electroacoustic devices operating in the super high frequency range. Superior crystal quality and low stress films with thicknesses as low as 160 nm are achieved after a radio frequency plasma treatment of the iridium electrode followed by a two-step alternating current reactive magnetron sputtering of an aluminum target, which promotes better conditions for the nucleation of well textured AIN films in the very first stages of growth. Solidly mounted resonators tuned around 8 GHz with effective electromechanical coupling factors of 5.8% and quality factors Q up to 900 are achieved.

show abstract

4D-2 High Volume Production of a Fully Matched 5050 PCS-CDMA-BAW Duplexer

Cited by 11 publications

References 6 publications

Low-noise high-resolution BAW-based high-frequency oscillator

Low-noise high-resolution BAW-based high-frequency oscillator

Gravimetric biosensor based on a 1.3 GHz AlN shear-mode solidly mounted resonator

Low-thickness high-quality aluminum nitride films for super high frequency solidly mounted resonators

Contact Info

Product

Resources

About