46.3: DRAM‐Frame‐Memory Embedded SOG‐LCD

Haga, Hiroshi; Nonaka, Y.; Kamon, Youichiro; Kitagishi, Youich; Jumonji, Masayuki; Takatori, Kenichi; Asada, Hideki

doi:10.1889/1.2785597

Cited by 8 publications

(4 citation statements)

References 6 publications

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“…Several exploratory circuits including a central processing unit (CPU), dynamic random-access memory (DRAM), radiofrequency identification (RFID), low-voltage differential signal (LVDS) receivers, and microwave low-noise amplifiers (LNAs) have already been presented. [1][2][3][4][5] An excimerlaser-annealing (ELA) method 6) using a thin beam has been widely used for mass-producing poly-Si films. However, the TFTs on these films are not satisfactory in their performance for the above-mentioned high-end applications because these grains are typically as small as 0.3 -0.5 mm in diameter, and thus the TFT channel region contains many grain boundaries.…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh-Performance Polycrystalline Silicon Thin-Film Transistors on Excimer-Laser-Processed Pseudo-Single-Crystal Films

Mitani¹,

Endo²,

Taniguchi³

et al. 2008

jjap

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Thin-film transistors (TFTs) were fabricated on polycrystalline silicon (poly-Si) films formed by position-controlled largegrain growth technology using an excimer laser. The field-effect mobility, on-off transition slope, and threshold voltage were 914 cm 2 V À1 s À1 , 93 mV/decade, and 0.58 V for the n-channel device, and 254 cm 2 V À1 s À1 , 122 mV/decade, and À0:43 V for the p-channel device, respectively. These values indicate that TFTs had an ultrahigh performance comparable to that of {100}-oriented crystal-silicon metal-oxide-semiconductor (MOS) transistors. Furthermore, their effective mobilities had the same effective field and temperature dependences as those of MOS transistors, indicating that electrons and holes were predominantly scattered not by random grain boundaries or defects in the Si film, but by phonons at the SiO 2 -Si interface, similarly to those of crystal-silicon MOS transistors. These attractive results were obtained as a result of the fact that the TFT channel region was made up of nearly {100}-oriented single grains.

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Section: Introductionmentioning

confidence: 99%

Ultrahigh-Performance Polycrystalline Silicon Thin-Film Transistors on Excimer-Laser-Processed Pseudo-Single-Crystal Films

Mitani¹,

Endo²,

Taniguchi³

et al. 2008

jjap

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“…Based on the 3-phase clock dynamic shift register we have fabricated, we get further research on the data latch circuit which will be used as data driver for digital display method. [3] It consists of two parts one of which is the dynamic shift register generating the scan select enable signals. At the same time the data signal will be input serially as the select enable signal.…”

Section: The Latch Unit Designmentioning

confidence: 99%

Design of poly-Si TFT Shift Register and Latch Circuit by PMOS Process

Sun

Meng

et al. 2009

ECS Trans.

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The design of the PMOS dynamic shift register is proposed. This circuit had no static power consumption when generating the scan pulse output. The further research on the data driver circuit is also presented. Using PMOS dynamic shift register we had fabricated, we designed a digital signal latch unit based on PMOS TFT technology. The data signal could be sampled and latched serially through the combination of shift register and latch unit. Furthermore, we present a novel 2-phase clock shift register. It was composed of a dynamic signal transmitting part and a static signal holding part. Since the adoption of static holding circuit and the effect of bootstrapping, there is no capacitance in the schematic, which leads to a more compact and stable layout. The simulation result from Smart-Spice of Silvaco EDA software will be discussed.

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“…High mobility and good uniformity are essential requirements for polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) used in organic light-emitting diode (OLED) display backplanes 1,2) and systems-on-glass (SOGs) that have advanced circuit systems including central processing units (CPUs), dynamic random-access memories (DRAMs), radio-frequency identification (RFID) circuits, low-voltage differential signal (LVDS) receivers, or microwave lownoise amplifiers (LNAs). [3][4][5][6][7] An excimer-laser-annealing (ELA) method 8) using a narrow beam, however, is not able to be used to make such TFTs because grains in these films are typically as small as 0.3 -0.5 mm in diameter, and thus, the TFT channel region contains many random grain boundaries (GBs). Carriers are frequently scattered by GBs running across the channel, and this results in insufficient mobility.…”

Section: Introductionmentioning

confidence: 99%

Relationship between Thin-Film Transistor Characteristics and Crystallographic Orientation in Excimer-Laser-Processed Pseudo-Single-Crystal-Silicon Films

Mitani

Endo

Tsuboi

et al. 2010

Jpn. J. Appl. Phys.

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The characteristics of thin-film transistors (TFTs) fabricated on pseudo-single-crystal (PSX)-Si thin films were examined. The variations of mobility were more than the theoretical values derived from the crystallographic orientation dependence of a bulk Si metal–oxide–semiconductor (MOS) transistor. To clarify the origin of this discrepancy, the relationships between the TFT characteristics and the crystallographic orientation of Si films in the channel region were investigated by using an electron backscattering pattern (EBSP) method. It was found that the surface orientation dependence for the PSX-Si TFT was different from that for a bulk Si MOS transistor, especially for the p-channel mode. A group of TFTs having a nearly {100}-oriented nucleus had a mobility close to those of simultaneously processed silicon-on-insulator (SOI) devices in the p-channel mode as well as in the n-channel mode. In contrast, a group of TFTs having a nearly {110}-oriented nucleus had a low and widely scattered mobility. The reason for these results is that twin boundaries with dislocations are easily generated in a grain grown from a {110}-oriented nucleus in order to compensate for the difference of the growth rates in different directions.

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46.3: DRAM‐Frame‐Memory Embedded SOG‐LCD

Cited by 8 publications

References 6 publications

Ultrahigh-Performance Polycrystalline Silicon Thin-Film Transistors on Excimer-Laser-Processed Pseudo-Single-Crystal Films

Ultrahigh-Performance Polycrystalline Silicon Thin-Film Transistors on Excimer-Laser-Processed Pseudo-Single-Crystal Films

Design of poly-Si TFT Shift Register and Latch Circuit by PMOS Process

Relationship between Thin-Film Transistor Characteristics and Crystallographic Orientation in Excimer-Laser-Processed Pseudo-Single-Crystal-Silicon Films

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