45
                nm
           node back end of the line yield evaluation on ultrahigh density interconnect structures using electron beam direct write lithography

Icard, B.; Pain, Laurent; Arnal, V.; Manakli, S.; Le-Denmat, Jean-Christophe; Brun, P.; Vincent, Maxime; Soonkindt, Christophe; Minghetti, Blandine; Matsumiya, Tasuku

doi:10.1116/1.2429668

Cited by 2 publications

(1 citation statement)

References 4 publications

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“…For masks produced using electron-beam lithography (EBL), the local CDU and LER is limited by dose variation due to shot noise, the interaction of electrons with the resist [21][22][23][24][25], and resist homogeneity [26]. Previous efforts to address the dose variation have been focused on the e-beam source [27][28][29][30][31][32][33][34][35][36][37]; however, these techniques failed to account for the statistical nature of electron arrival.…”

Section: Introductionmentioning

confidence: 99%

Real-time dose control for electron-beam lithography

Yang-Keathley¹,

Maloney²,

Hastings³

2020

Nanotechnology

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Shot-to-shot, or pixel-to-pixel, dose variation during electron-beam lithography is a significant practical and fundamental problem. Dose variations associated with charging, electron source instability, optical system drift, and ultimately shot noise in the e-beam itself conspire to critical dimension variability, line width/edge roughness, and limited throughput. It would be an important improvement to e-beam based patterning technology if real-time feedback control of electron-dose were provided so that pattern quality and throughput would be improved beyond the shot noise limit. In this paper, we demonstrate control of e-beam dose based on the measurement of electron arrival at the sample where patterns are written, rather than from the source or another point in the electron optical column. Our results serve as the first steps towards real-time dose control and eventually overcoming the shot noise.

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