45-nm CMOS SOI Technology Characterization for Millimeter-Wave Applications

Inac, Ozgur; Uzunkol, Mehmet; Rebeiz, Gabriel M.

doi:10.1109/tmtt.2014.2317551

Cited by 85 publications

(20 citation statements)

References 15 publications

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“…3(b). The interconnect parasitics are much better than CMOS transistors, which typically reduce f t / f max from 460 GHz (referred to M1) to 260 GHz (referred to top metal) [37]. The better performance is due to the all-copper backend and the thick dielectrics used in the IBM 9HP process.…”

Section: Technologymentioning

confidence: 99%

A 70–80-GHz SiGe Amplifier With Peak Output Power of 27.3 dBm

Lin

Rebeiz

2016

IEEE Trans. Microwave Theory Techn.

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This paper presents a fully integrated 16-way power-combining amplifier for 67-92-GHz applications in an advanced 90-nm silicon germanium HBT technology. The 16-way amplifier is implemented using three-stage commonemitter single-ended power amplifiers (PAs) as building blocks, and reactive λ/4 impedance transformation networks are used for power combining. The three-stage single PA breakout has a small-signal gain of 22 dB at 74 GHz, and saturation output power ( P sat ) of 14.3-16.4 dBm at 68-99 GHz. The powercombining PA achieves a small-signal gain of 19.3 dB at 74 GHz, and P sat of 25.3-27.3 dBm at 68-88 GHz with a maximum power added efficiency of 12.4%. The 16-way amplifier occupies 6.48 mm 2 (including pads) and consumes a maximum current of 2.1 A from a 1.8 V supply. To the best of our knowledge, this is the highest power silicon-based E-band amplifier to date. Index Terms-E-band, HBT, millimeter-wave (mm-wave) integrated circuits, power amplifier (PA), silicon germanium (SiGe). I. INTRODUCTION S ILICON-BASED millimeter-wave (mm-wave) systems at E-band (71-76, 81-86, and 92-95 GHz) have been developed over the past few years for point-to-point multi-Gb/s communication [1]-[5] and automotive radar systems [6]-[11].Although advanced CMOS and silicon germanium (SiGe) technologies provide low-cost, high-yield, and high-integration solutions for such systems, the transmit output power is still limited due to the scaling down in transistor sizes and lower breakdown voltages. Therefore, III-V technologies, such as GaAs [12]-[14], GaN [15]-[18], and InP [19]-[21], still dominate the power amplifier (PA) area at these frequencies despite of their relatively high cost. Power-combining techniques, such as voltage combining where transformers are used [22]-[25], current combining where the Wilkinson combiners or T-junctions are used [26]-[30], and spatial power combing [31]-[33], are usually employed to increase the output power of CMOS and SiGe technologies. Wilkinson-and transformer-based powercombining techniques result in relatively high loss when the number of combining elements increases, and the free-space power-combining technique requires on-chip antennas, which Manuscript

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Section: Technologymentioning

confidence: 99%

A 70–80-GHz SiGe Amplifier With Peak Output Power of 27.3 dBm

Lin

Rebeiz

2016

IEEE Trans. Microwave Theory Techn.

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“…with a single emitter finger, dual collector, and base fingers (C-B-E-B-C) results in a peak f t / f max of 310/350 GHz at 1.5-2.5 mA/μm bias current when referred to M1 (Metal 1) [38], and f t / f max drops to 260/300 GHz when referred to the top metal LD due to the interconnection parasitics [28], [39]. This is much better than the CMOS transistors which typically reduce f t / f max from 460 GHz (referred to M1) to 260 GHz (referred to the top metal) [40]. The better performance is due to the all-copper backend and the thick dielectrics used in the IBM 9HP process.…”

Section: Technologymentioning

confidence: 99%

A SiGe Multiplier Array With Output Power of 5–8 dBm at 200–230 GHz

Lin

Rebeiz

2016

IEEE Trans. Microwave Theory Techn.

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This paper presents an integrated four-way power-combining multiplier for 200-230-GHz applications in an advanced 90-nm silicon germanium HBT technology. The active multiplier is implemented using balanced transistor pairs driven by pseudodifferential power amplifiers (PAs) at 100-120 GHz and the outputs at 200-240 GHz are power combined using reactive λ/4 impedance transformation networks. A single multiplier breakout results in an output power of 1.8 dBm at 245 GHz with a peak conversion gain of −15.5 dB. The power-combining multiplier achieves an output power of 8 dBm at 215 GHz and >5 dBm at 200-230 GHz. A peak conversion gain of 1.6 dB is achieved at an output power of ∼0 dBm at 215 GHz. The fourway combined multiplier occupies 3.63 mm 2 , including pads, and consumes 1.2 A from a 1.8 V supply mainly due to the differential 100-120-GHz PAs. To the best of our knowledge, this is the highest output power achieved in multipliers and amplifiers among all silicon-based technology to-date at frequencies above 200 GHz and with a record wide bandwidth.Index Terms-Frequency doubler, millimeter-wave (mmw) integrated circuits, multiplier, power amplifier (PA), silicon germanium (SiGe) HBT, terahertz (THz).

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“…In this paper, we take into account the full models of the transistors of a process design kit commercially available, which adopts the BSIM4v4 model including their parasitic components and second order effects. In compliance with the expectations from the theoretical study, in our analyses, we will exclude the effects of the layout interconnections that introduce additional parasitic components, unwanted coupling, and other proximity effects, which can be minimized by careful layout and estimated through electromagnetic and parasitic extraction tools according to latest advanced design approach for high‐frequency integrated circuits on silicon . Moreover, it is worth considering that the additional parasitic components introduced by the layout could lead to an unjustified increase of complexity and cumbersome expressions that could mask the inherent topological properties that we would like bringing to the light in our study.…”

Section: Introductionmentioning

confidence: 98%

“…layout and estimated through electromagnetic and parasitic extraction tools according to latest advanced design approach for high-frequency integrated circuits on silicon [8,9]. Moreover, it is worth considering that the additional parasitic components introduced by the layout could lead to an unjustified increase of complexity and cumbersome expressions that could mask the inherent topological properties that we would like bringing to the light in our study.…”

Section: Introductionmentioning

confidence: 99%

Transformer‐coupled π‐network differential CMOS oscillator circuit topology

Chlis

Pepe²,

Zito

2016

Circuit Theory & Apps

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Summary This paper reports a novel oscillator circuit topology based on a transformer‐coupled π‐network. As a case study, the proposed oscillator topology has been designed and studied for 60 GHz applications in the frame of the emerging fifth generation wireless communications. The analytical expression of the oscillation frequency is derived and validated through circuit simulations. The root‐locus analysis shows that oscillations occur only at that resonant frequency of the LC tank. Moreover, a closed‐form expression for the quality factor (Q) of the LC tank is derived which shows the enhancement of the equivalent quality factor of the LC tank due to the transformer‐coupling. Last, a phase noise analysis is reported and the analytical expressions of phase noise due to flicker and thermal noise sources are derived and validated by the results obtained through SpectreRF simulations in the Cadence design environment with a 28 nm CMOS process design kit commercially available. Copyright © 2016 John Wiley & Sons, Ltd.

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45-nm CMOS SOI Technology Characterization for Millimeter-Wave Applications

Cited by 85 publications

References 15 publications

A 70–80-GHz SiGe Amplifier With Peak Output Power of 27.3 dBm

A 70–80-GHz SiGe Amplifier With Peak Output Power of 27.3 dBm

A SiGe Multiplier Array With Output Power of 5–8 dBm at 200–230 GHz

Transformer‐coupled π‐network differential CMOS oscillator circuit topology

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