45.1: Invited Paper: Future Possibilities of Crystalline Oxide Semiconductor, Especially C‐Axis‐Aligned Crystalline IGZO

Abstract

Through detailed analyses, the structure of c-axis-aligned crystalline (CAAC) IGZO, which is a dense, stable crystal morphology, is found to differ from single-crystal and amorphous structures. We propose a model for determining its film deposition mechanism. CAAC-IGZO field-effect transistors find application in displays for use as human-machine interfaces.

56‐3: New Process to Fabricate Hybrid Display

“…3(a)], OLEDs are deposited on a substrate provided with an OLED control circuit so that the OLEDs have a top-emission structure. Note that the FETs in the control circuit are fabricated from an oxide semiconductor [30][31][32][33][34][35]. In the next step [ Fig.…”

45-3: A Novel Seamless Kawara-type Multidisplay with Flexible OLED Panels Using an Optically Isotropic Film

“…We have developed our own equipment to automate this separation process, making this technology suitable for mass production [7]. The FETs use c-axis-aligned crystalline indium gallium zinc oxide [8][9][10][11][12][13], and color display is achieved with a "white tandem OLED, top emission, and color filter" (WTC) structure [14][15][16]. Transparent electrodes with different thicknesses for different colors are provided on reflective electrodes, i.e., a microcavity structure is employed.…”

7-2: Transmissive OLED and Reflective LC Hybrid (TR-Hybrid) Display

“…We discovered CAAC-IGZO and nanocrystalline IGZO (nc-IGZO), which have crystal morphologies different from those of single crystal and amorphous IGZOs [9][10][11][12]. Cornell University has also investigated CAAC-OS [13][14][15][16][17][18].…”