428 Internal modified layer formation mechanism into silicon with permeable nanosecond laser

Ohmura, Etsuji; Fukumitsu, Kenshi; Uchiyama, Naoki; Atsumi, K.; Kumagai, Masayoshi; Morita, Hideki

doi:10.1299/jsmemmt.2006.6.285

Cited by 10 publications

(10 citation statements)

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“…Another application of subsurface modifications in silicon is wafer dicing [11,12]. Wafer dicing by means of laser-induced subsurface modifications is a process that consists of two steps (see Fig.…”

Section: Introductionmentioning

confidence: 99%

Two-photon–induced internal modification of silicon by erbium-doped fiber laser

Verburg¹,

Römer²,

Veld³

2014

Opt. Express

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Three-dimensional bulk modification of dielectric materials by multiphoton absorption of laser pulses is a well-established technology. The use of multiphoton absorption to machine bulk silicon has been investigated by a number of authors using femtosecond laser sources. However, no modifications confined in bulk silicon, induced by multiphoton absorption, have been reported so far. Based on results from numerical simulations, we employed an erbium-doped fiber laser operating at a relatively long pulse duration of 3.5 nanoseconds and a wavelength of 1549 nm for this process. We found that these laser parameters are suitable to produce modifications at various depths inside crystalline silicon.

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Section: Introductionmentioning

confidence: 99%

Two-photon–induced internal modification of silicon by erbium-doped fiber laser

Verburg¹,

Römer²,

Veld³

2014

Opt. Express

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“…12,14,86,160,170 It consists of two steps: (1) laser-induced subsurface degradation or modified layer as a cleaving initiator with the frontside and backside surfaces remaining intact (Figures 45 and 46); (2) die separation under radial tensile stresses via tape expansion. Ohmura et al [171][172] studied the mechanism of a nanosecond nearinfrared laser-induced subsurface degradation in silicon wafers. The mechanism for stealth dicing in silicon was described as follows.…”

Section: Stealth Lasermentioning

confidence: 99%

Ultrathin Wafer Pre-Assembly and Assembly Process Technologies: A Review

Marks

Hassan

Cheong

2015

Critical Reviews in Solid State and Materials Sciences

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Ultrathin silicon wafer technology is reviewed in terms of the semiconductor applications, critical challenges, and wafer pre-assembly and assembly process technologies and their underlying mechanisms. Mechanical backgrinding has been the standard process for wafer thinning in the semiconductor industry owing to its low cost and productivity. As the thickness requirement of wafers is reduced to below 100 mm, many challenges are being faced due to wafer/die bow, mechanical strength, wafer handling, total thickness variation (TTV), dicing, and packaging assembly. Various ultrathin wafer processing and assembly technologies have been developed to address these challenges. These include wafer carrier systems to handle ultrathin wafers; backgrinding subsurface damage and surface roughness reduction, and post-grinding treatment to increase wafer/die strength; improved wafer carrier flatness and backgrinding auto-TTV control to improve TTV; wafer dicing technologies to reduce die sidewall damage to increase die strength; and assembly methods for die pick-up, die transfer, die attachment, and wire bonding. Where applicable, current process issues and limitations, and future work needed are highlighted.

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“…In addition, spatio-temporal enhanced front-side ablation [11][12][13] is used when high quality cuts or precise patterns are required. For transparent materials, all of the above-mentioned techniques are applicable, and, in addition, several modification-based techniques exist: chemical etching of laser-induced bulk modifications [14][15][16][17][18][19], dicing techniques [20,21] etc. These techniques demonstrate the exceptional quality of the machined samples and very good fabrication throughput results; however, they are not applicable for all transparent materials and involve working with highly toxic chemicals.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Micromachining Process of Dielectric and Metallic Substrates Immersed in Water with Femtosecond Pulses

et al. 2015

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Abstract:Micromachining of 1 mm thick dielectric and metallic substrates was conducted using femtosecond pulse generated filaments in water. Several hundred microjoule energy pulses were focused within a water layer covering the samples. Within this water layer, non-linear self-action mechanisms transform the beam, which enables higher quality and throughput micromachining results compared to focusing in air. Evidence of beam transformation into multiple light filaments is presented along with theoretical modeling results. In addition, multiparametric optimization of the fabrication process was performed using statistical methods and certain acquired dependencies are further explained and tested using laser shadowgraphy. We demonstrate that this micromachining process exhibits complicated dynamics within the water layer, which are influenced by the chosen parameters.

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428 Internal modified layer formation mechanism into silicon with permeable nanosecond laser

Cited by 10 publications

References 0 publications

Two-photon–induced internal modification of silicon by erbium-doped fiber laser

Two-photon–induced internal modification of silicon by erbium-doped fiber laser

Ultrathin Wafer Pre-Assembly and Assembly Process Technologies: A Review

Analysis of the Micromachining Process of Dielectric and Metallic Substrates Immersed in Water with Femtosecond Pulses

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