42 GHz pin Germanium photodetector integrated in a silicon-on-insulator waveguide

Vivien, Laurent; Osmond, Johann; Fédéli, Jean-Marc; Marris‐Morini, Delphine; Crozat, P.; Damlencourt, Jean‐François; Cassan, Éric; Lecunff, Y.; Laval, S.

doi:10.1364/oe.17.006252

Cited by 420 publications

(194 citation statements)

References 14 publications

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“…5(b), have been realized [20]. The operation frequency more than 30 GHz has been reported for such integrated devices [34,35]. Ava- lanche photodiodes of Ge with a carrier multiplication layer of Si have been also fabricated for the highly sensitive photodetection [36].…”

Section: Electrical Characteristics Of Ge Pin Diodes On Simentioning

confidence: 99%

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ishikawa

Saito

2014

IEICE Electron. Express

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Section: Electrical Characteristics Of Ge Pin Diodes On Simentioning

confidence: 99%

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ishikawa

Saito

2014

IEICE Electron. Express

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“…Regarded as a promising platform, researchers in this field have ventured into the development of silicon photonic-based devices for high performance modulators, lasers and photodetectors. Besides the high-bandwidth photodiodes that have been demonstrated on silicon [78,79], heterogeneous integration of III-V on silicon provides an attractive way to achieve tunable lasers, broadband light sources [80], as well as optical amplifiers [81] to overcome system loss. The cross section of such directly bonded heterogenous integration incorporating a silicon waveguide with a III-V gain medium is used to demonstrate a hybrid silicon evanescent amplifier.…”

Section: Integrated Mwp For Inline Photonic Signal Processing and Fulmentioning

confidence: 99%

Integrated Microwave Photonics for Wideband Signal Processing

Chew

Song

et al. 2017

Photonics

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Abstract:We describe recent progress in integrated microwave photonics in wideband signal processing applications with a focus on the key signal processing building blocks, the realization of monolithic integration, and cascaded photonic signal processing for analog radio frequency (RF) photonic links. New developments in integration-based microwave photonic techniques, that have high potentialities to be used in a variety of sensing applications for enhanced resolution and speed are also presented.

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“…For the O-to U-bands of telecom wavelengths (1.26-1.67 μm), Germanium's cutoff wavelength of ∼1.8 μm appeals as a perfect choice. Ge-on-Si photodetectors have been in the making for three decades [36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51]. The challenge has been the material's large lattice mismatch with silicon (∼4%).…”

Section: Germanium Photodetectors On Siliconmentioning

confidence: 99%

Emerging heterogeneous integrated photonic platforms on silicon

Fathpour

2015

Nanophotonics

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Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the freecarrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III-V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.

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42 GHz pin Germanium photodetector integrated in a silicon-on-insulator waveguide

Cited by 420 publications

References 14 publications

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

Integrated Microwave Photonics for Wideband Signal Processing

Emerging heterogeneous integrated photonic platforms on silicon

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