2022 International Electron Devices Meeting (IEDM) 2022
DOI: 10.1109/iedm45625.2022.10019416
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41% Reduction In Power Stage Area On Silicon-On-Insulator Bipolar-CMOS-DMOS-IGBT Platform With Newly Developed Multiple Deep-Oxide Trench Technology

Long Zhang
1
,
Jun Ma
2
,
Yong Gu
3
et al.
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